IMZA65R072M1HXKSA1 Infineon Technologies
Hersteller: Infineon TechnologiesCoolSiC™ MOSFET 650V – SiC MOSFET delivering reliable and cost-effective performance in TO247 3–pin package
auf Bestellung 340 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 11+ | 13.9 EUR |
| 100+ | 12.28 EUR |
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Technische Details IMZA65R072M1HXKSA1 Infineon Technologies
Description: MOSFET 650V NCH SIC TRENCH, Packaging: Tube, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 28A (Tc), Rds On (Max) @ Id, Vgs: 94mOhm @ 13.3A, 18V, Power Dissipation (Max): 96W (Tc), Vgs(th) (Max) @ Id: 5.7V @ 4mA, Supplier Device Package: PG-TO247-4-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 18V, Vgs (Max): +23V, -5V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 744 pF @ 400 V.
Weitere Produktangebote IMZA65R072M1HXKSA1 nach Preis ab 9.97 EUR bis 18.71 EUR
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IMZA65R072M1HXKSA1 | Hersteller : Infineon Technologies |
CoolSiC™ MOSFET 650V – SiC MOSFET delivering reliable and cost-effective performance in TO247 3–pin package |
auf Bestellung 340 Stücke: Lieferzeit 14-21 Tag (e) |
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IMZA65R072M1HXKSA1 | Hersteller : Infineon Technologies |
CoolSiC™ MOSFET 650V – SiC MOSFET delivering reliable and cost-effective performance in TO247 3–pin package |
auf Bestellung 560 Stücke: Lieferzeit 14-21 Tag (e) |
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IMZA65R072M1HXKSA1 | Hersteller : Infineon Technologies |
CoolSiC™ MOSFET 650V – SiC MOSFET delivering reliable and cost-effective performance in TO247 3–pin package |
auf Bestellung 560 Stücke: Lieferzeit 14-21 Tag (e) |
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IMZA65R072M1HXKSA1 | Hersteller : Infineon Technologies |
Description: MOSFET 650V NCH SIC TRENCH Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 28A (Tc) Rds On (Max) @ Id, Vgs: 94mOhm @ 13.3A, 18V Power Dissipation (Max): 96W (Tc) Vgs(th) (Max) @ Id: 5.7V @ 4mA Supplier Device Package: PG-TO247-4-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +23V, -5V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 744 pF @ 400 V |
auf Bestellung 236 Stücke: Lieferzeit 10-14 Tag (e) |
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IMZA65R072M1HXKSA1 | Hersteller : Infineon Technologies |
MOSFET SILICON CARBIDE MOSFET |
auf Bestellung 122 Stücke: Lieferzeit 10-14 Tag (e) |
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IMZA65R072M1HXKSA1 | Hersteller : INFINEON |
Description: INFINEON - IMZA65R072M1HXKSA1 - Siliziumkarbid-MOSFET, SiC-Trench, Eins, n-Kanal, 28 A, 650 V, 0.072 ohm, TO-247 tariffCode: 85412900 Drain-Source-Spannung Vds: 650V rohsCompliant: YES Dauer-Drainstrom Id: 28A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4.5V euEccn: NLR Verlustleistung: 96W Anzahl der Pins: 4Pins productTraceability: No Rds(on)-Prüfspannung: 18V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.072ohm |
auf Bestellung 75 Stücke: Lieferzeit 14-21 Tag (e) |
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IMZA65R072M1HXKSA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH SiC 650V 28A 4-Pin(4+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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| IMZA65R072M1HXKSA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 18A; Idm: 69A; 96W Mounting: THT Features of semiconductor devices: Kelvin terminal Technology: CoolSiC™; SiC Kind of channel: enhanced Pulsed drain current: 69A Gate-source voltage: -5...23V Case: TO247-4 Drain-source voltage: 650V Drain current: 18A On-state resistance: 94mΩ Type of transistor: N-MOSFET Power dissipation: 96W Polarisation: unipolar Kind of package: tube Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| IMZA65R072M1HXKSA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 18A; Idm: 69A; 96W Mounting: THT Features of semiconductor devices: Kelvin terminal Technology: CoolSiC™; SiC Kind of channel: enhanced Pulsed drain current: 69A Gate-source voltage: -5...23V Case: TO247-4 Drain-source voltage: 650V Drain current: 18A On-state resistance: 94mΩ Type of transistor: N-MOSFET Power dissipation: 96W Polarisation: unipolar Kind of package: tube |
Produkt ist nicht verfügbar |