IMZA65R083M1HXKSA1 Infineon Technologies
| Anzahl | Preis |
|---|---|
| 1+ | 8.47 EUR |
| 10+ | 5.79 EUR |
| 100+ | 5.21 EUR |
| 480+ | 4.65 EUR |
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Technische Details IMZA65R083M1HXKSA1 Infineon Technologies
Description: SILICON CARBIDE MOSFET, PG-TO247, Input Capacitance (Ciss) (Max) @ Vds: 624 pF @ 400 V, Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 18 V, Drain to Source Voltage (Vdss): 650 V, Vgs (Max): +20V, -2V, Drive Voltage (Max Rds On, Min Rds On): 18V, Supplier Device Package: PG-TO247-4-3, Vgs(th) (Max) @ Id: 5.7V @ 3.3mA, Power Dissipation (Max): 104W (Tc), Rds On (Max) @ Id, Vgs: 111mOhm @ 11.2A, 18V, Current - Continuous Drain (Id) @ 25°C: 26A (Tc), FET Type: N-Channel, Technology: SiCFET (Silicon Carbide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-4, Packaging: Tube.
Weitere Produktangebote IMZA65R083M1HXKSA1 nach Preis ab 19.25 EUR bis 20.94 EUR
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IMZA65R083M1HXKSA1 | Infineon Technologies |
 Description: SILICON CARBIDE MOSFET, PG-TO247Input Capacitance (Ciss) (Max) @ Vds: 624 pF @ 400 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 18 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): +20V, -2V Drive Voltage (Max Rds On, Min Rds On): 18V Supplier Device Package: PG-TO247-4-3 Vgs(th) (Max) @ Id: 5.7V @ 3.3mA Power Dissipation (Max): 104W (Tc) Rds On (Max) @ Id, Vgs: 111mOhm @ 11.2A, 18V Current - Continuous Drain (Id) @ 25°C: 26A (Tc) FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-4 Packaging: Tube |
auf Bestellung 44 Stücke: Lieferzeit 10-14 Tag (e) |
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| IMZA65R083M1HXKSA1 |
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Hersteller: Infineon Technologies
Description: SILICON CARBIDE MOSFET, PG-TO247
Input Capacitance (Ciss) (Max) @ Vds: 624 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 18 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): +20V, -2V
Drive Voltage (Max Rds On, Min Rds On): 18V
Supplier Device Package: PG-TO247-4-3
Vgs(th) (Max) @ Id: 5.7V @ 3.3mA
Power Dissipation (Max): 104W (Tc)
Rds On (Max) @ Id, Vgs: 111mOhm @ 11.2A, 18V
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-4
Packaging: Tube
Description: SILICON CARBIDE MOSFET, PG-TO247
Input Capacitance (Ciss) (Max) @ Vds: 624 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 18 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): +20V, -2V
Drive Voltage (Max Rds On, Min Rds On): 18V
Supplier Device Package: PG-TO247-4-3
Vgs(th) (Max) @ Id: 5.7V @ 3.3mA
Power Dissipation (Max): 104W (Tc)
Rds On (Max) @ Id, Vgs: 111mOhm @ 11.2A, 18V
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-4
Packaging: Tube
auf Bestellung 44 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 20.94 EUR |
| 10+ | 19.25 EUR |