IMZA75R008M1HXKSA1 Infineon Technologies
auf Bestellung 239 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 58.01 EUR |
| 10+ | 47.54 EUR |
| 100+ | 37.58 EUR |
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Technische Details IMZA75R008M1HXKSA1 Infineon Technologies
Description: SILICON CARBIDE MOSFET, Packaging: Tube, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 163A (Tc), Rds On (Max) @ Id, Vgs: 7.2mOhm @ 90.3A, 20V, Power Dissipation (Max): 517W (Tc), Vgs(th) (Max) @ Id: 5.6V @ 32.4mA, Supplier Device Package: PG-TO247-4-U02, Drive Voltage (Max Rds On, Min Rds On): 15V, 20V, Vgs (Max): +23V, -5V, Drain to Source Voltage (Vdss): 750 V, Gate Charge (Qg) (Max) @ Vgs: 178 nC @ 500 V, Input Capacitance (Ciss) (Max) @ Vds: 6137 pF @ 500 V.
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| Foto | Bezeichnung | Hersteller | Beschreibung |
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IMZA75R008M1HXKSA1 | Hersteller : Infineon Technologies |
 Description: SILICON CARBIDE MOSFETPackaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 163A (Tc) Rds On (Max) @ Id, Vgs: 7.2mOhm @ 90.3A, 20V Power Dissipation (Max): 517W (Tc) Vgs(th) (Max) @ Id: 5.6V @ 32.4mA Supplier Device Package: PG-TO247-4-U02 Drive Voltage (Max Rds On, Min Rds On): 15V, 20V Vgs (Max): +23V, -5V Drain to Source Voltage (Vdss): 750 V Gate Charge (Qg) (Max) @ Vgs: 178 nC @ 500 V Input Capacitance (Ciss) (Max) @ Vds: 6137 pF @ 500 V |
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