Technische Details IMZC120R012M2HXKSA1 Infineon Technologies
Description: SICFET N-CH 1200V 129A TO247, Packaging: Tube, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 129A (Tc), Rds On (Max) @ Id, Vgs: 12mOhm @ 57A, 18V, Power Dissipation (Max): 480W (Tc), Vgs(th) (Max) @ Id: 5.1V @ 17.8mA, Supplier Device Package: PG-TO247-4-17, Drive Voltage (Max Rds On, Min Rds On): 15V, 18V, Vgs (Max): +23V, -7V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 4050 pF @ 800 V.
Weitere Produktangebote IMZC120R012M2HXKSA1 nach Preis ab 22.67 EUR bis 40.34 EUR
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IMZC120R012M2HXKSA1 | Hersteller : Infineon Technologies |
 Description: SICFET N-CH 1200V 129A TO247Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 129A (Tc) Rds On (Max) @ Id, Vgs: 12mOhm @ 57A, 18V Power Dissipation (Max): 480W (Tc) Vgs(th) (Max) @ Id: 5.1V @ 17.8mA Supplier Device Package: PG-TO247-4-17 Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs (Max): +23V, -7V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 4050 pF @ 800 V |
auf Bestellung 261 Stücke: Lieferzeit 10-14 Tag (e) |
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