IMZC140R019M2HXKSA1 Infineon Technologies
Hersteller: Infineon TechnologiesSiC MOSFETs CoolSiC 1400 V SiC MOSFET G2 with .XT interconnection technology
auf Bestellung 240 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 24.2 EUR |
| 10+ | 19.94 EUR |
| 100+ | 17.25 EUR |
| 480+ | 13.89 EUR |
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Technische Details IMZC140R019M2HXKSA1 Infineon Technologies
Description: IMZC140R019M2HXKSA1, Packaging: Tube, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 92A (Tc), Rds On (Max) @ Id, Vgs: 19mOhm @ 40.4A, 18V, Power Dissipation (Max): 380W (Tc), Vgs(th) (Max) @ Id: 5.1V @ 12.7mA, Supplier Device Package: PG-TO247-4-17, Drive Voltage (Max Rds On, Min Rds On): 15V, 18V, Vgs (Max): +23V, -7V, Drain to Source Voltage (Vdss): 1.4 kV, Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 2860 pF @ 1000 V.
Weitere Produktangebote IMZC140R019M2HXKSA1 nach Preis ab 13.3 EUR bis 24.13 EUR
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| IMZC140R019M2HXKSA1 | Hersteller : Infineon Technologies |
Description: IMZC140R019M2HXKSA1 Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 92A (Tc) Rds On (Max) @ Id, Vgs: 19mOhm @ 40.4A, 18V Power Dissipation (Max): 380W (Tc) Vgs(th) (Max) @ Id: 5.1V @ 12.7mA Supplier Device Package: PG-TO247-4-17 Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs (Max): +23V, -7V Drain to Source Voltage (Vdss): 1.4 kV Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 2860 pF @ 1000 V |
auf Bestellung 240 Stücke: Lieferzeit 10-14 Tag (e) |
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