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IPA028N04NM3SXKSA1

IPA028N04NM3SXKSA1 Infineon Technologies


Infineon-IPA028N04NM3S-DataSheet-v02_01-EN.pdf?fileId=5546d4626cb27db2016d5cc70b8d6dd6 Hersteller: Infineon Technologies
Description: TRENCH <= 40V PG-TO220-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 89A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 89A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 4V @ 95µA
Supplier Device Package: PG-TO220-FP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9500 pF @ 20 V
auf Bestellung 500 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.21 EUR
10+3.39 EUR
100+2.35 EUR
500+1.91 EUR
Mindestbestellmenge: 4
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Technische Details IPA028N04NM3SXKSA1 Infineon Technologies

Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 40V; 63A; Idm: 356A; 38W; TO220FP, Drain-source voltage: 40V, Drain current: 63A, On-state resistance: 2.8mΩ, Type of transistor: N-MOSFET, Power dissipation: 38W, Polarisation: unipolar, Kind of package: tube, Technology: OptiMOS™ 3, Kind of channel: enhancement, Gate-source voltage: ±20V, Pulsed drain current: 356A, Mounting: THT, Case: TO220FP, Anzahl je Verpackung: 1 Stücke.

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IPA028N04NM3SXKSA1 IPA028N04NM3SXKSA1 Hersteller : INFINEON TECHNOLOGIES Infineon-IPA028N04NM3S-DataSheet-v02_01-EN.pdf?fileId=5546d4626cb27db2016d5cc70b8d6dd6 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 63A; Idm: 356A; 38W; TO220FP
Drain-source voltage: 40V
Drain current: 63A
On-state resistance: 2.8mΩ
Type of transistor: N-MOSFET
Power dissipation: 38W
Polarisation: unipolar
Kind of package: tube
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 356A
Mounting: THT
Case: TO220FP
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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IPA028N04NM3SXKSA1 Hersteller : Infineon Technologies Infineon-IPA028N04NM3S-DataSheet-v02_01-EN-1859238.pdf MOSFET TRENCH <= 40V
Produkt ist nicht verfügbar
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IPA028N04NM3SXKSA1 IPA028N04NM3SXKSA1 Hersteller : INFINEON TECHNOLOGIES Infineon-IPA028N04NM3S-DataSheet-v02_01-EN.pdf?fileId=5546d4626cb27db2016d5cc70b8d6dd6 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 63A; Idm: 356A; 38W; TO220FP
Drain-source voltage: 40V
Drain current: 63A
On-state resistance: 2.8mΩ
Type of transistor: N-MOSFET
Power dissipation: 38W
Polarisation: unipolar
Kind of package: tube
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 356A
Mounting: THT
Case: TO220FP
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH