IPA028N04NM3SXKSA1 Infineon Technologies
Hersteller: Infineon TechnologiesDescription: TRENCH <= 40V PG-TO220-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 89A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 89A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 4V @ 95µA
Supplier Device Package: PG-TO220-FP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9500 pF @ 20 V
auf Bestellung 500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4+ | 5.21 EUR |
| 10+ | 3.39 EUR |
| 100+ | 2.35 EUR |
| 500+ | 1.91 EUR |
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Technische Details IPA028N04NM3SXKSA1 Infineon Technologies
Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 40V; 63A; Idm: 356A; 38W; TO220FP, Mounting: THT, Technology: OptiMOS™ 3, Type of transistor: N-MOSFET, Kind of package: tube, Case: TO220FP, Polarisation: unipolar, On-state resistance: 2.8mΩ, Gate-source voltage: ±20V, Power dissipation: 38W, Drain-source voltage: 40V, Drain current: 63A, Pulsed drain current: 356A, Kind of channel: enhancement.
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| Foto | Bezeichnung | Hersteller | Beschreibung |
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| IPA028N04NM3SXKSA1 | Hersteller : Infineon Technologies |
MOSFET TRENCH <= 40V |
Produkt ist nicht verfügbar |
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IPA028N04NM3SXKSA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 63A; Idm: 356A; 38W; TO220FP Mounting: THT Technology: OptiMOS™ 3 Type of transistor: N-MOSFET Kind of package: tube Case: TO220FP Polarisation: unipolar On-state resistance: 2.8mΩ Gate-source voltage: ±20V Power dissipation: 38W Drain-source voltage: 40V Drain current: 63A Pulsed drain current: 356A Kind of channel: enhancement |
Produkt ist nicht verfügbar |