IPA032N06N3 G Infineon Technologies

Description: N-CHANNEL POWER MOSFET, Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 30 V, Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: PG-TO220-3-111, Vgs(th) (Max) @ Id: 4V @ 118µA, Power Dissipation (Max): 41W (Tc), Rds On (Max) @ Id, Vgs: 3.2mOhm @ 80A, 10V, Current - Continuous Drain (Id) @ 25°C: 84A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3 Full Pack, Packaging: Bulk.