IPA032N06N3 G Infineon Technologies
auf Bestellung 499 Stücke:
Lieferzeit 150-154 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1+ | 4.72 EUR |
10+ | 3.96 EUR |
25+ | 3.73 EUR |
100+ | 3.2 EUR |
250+ | 3.03 EUR |
500+ | 2.85 EUR |
1000+ | 2.45 EUR |
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Technische Details IPA032N06N3 G Infineon Technologies
Description: N-CHANNEL POWER MOSFET, Packaging: Bulk, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 84A (Tc), Rds On (Max) @ Id, Vgs: 3.2mOhm @ 80A, 10V, Power Dissipation (Max): 41W (Tc), Vgs(th) (Max) @ Id: 4V @ 118µA, Supplier Device Package: PG-TO220-3-111, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 30 V.
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IPA032N06N3 G | Hersteller : Infineon Technologies |
Description: N-CHANNEL POWER MOSFET Packaging: Bulk Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 84A (Tc) Rds On (Max) @ Id, Vgs: 3.2mOhm @ 80A, 10V Power Dissipation (Max): 41W (Tc) Vgs(th) (Max) @ Id: 4V @ 118µA Supplier Device Package: PG-TO220-3-111 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 30 V |
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