IPA037N08N3GXKSA1 INFINEON TECHNOLOGIES
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 75A; 41W; TO220FP
Mounting: THT
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Kind of package: tube
Case: TO220FP
Polarisation: unipolar
On-state resistance: 3.7mΩ
Gate-source voltage: ±20V
Power dissipation: 41W
Drain current: 75A
Drain-source voltage: 80V
Produktrezensionen
Produktbewertung abgeben
Technische Details IPA037N08N3GXKSA1 INFINEON TECHNOLOGIES
Description: MOSFET N-CH 80V 75A TO220-FP, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 75A (Tc), Rds On (Max) @ Id, Vgs: 3.7mOhm @ 75A, 10V, Power Dissipation (Max): 41W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 155µA, Supplier Device Package: PG-TO220-FP, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 8110 pF @ 40 V.
Weitere Produktangebote IPA037N08N3GXKSA1 nach Preis ab 4.33 EUR bis 4.33 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
||
|---|---|---|---|---|---|---|---|
 |
IPA037N08N3GXKSA1 | Infineon Technologies |
Description: MOSFET N-CH 80V 75A TO220-FP Input Capacitance (Ciss) (Max) @ Vds: 8110 pF @ 40 V Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V Drain to Source Voltage (Vdss): 80 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Supplier Device Package: PG-TO220-FP Vgs(th) (Max) @ Id: 3.5V @ 155µA Power Dissipation (Max): 41W (Tc) Rds On (Max) @ Id, Vgs: 3.7mOhm @ 75A, 10V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Packaging: Bulk |
auf Bestellung 92863 Stücke: Lieferzeit 10-14 Tag (e) |
|
| IPA037N08N3GXKSA1 |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 80V 75A TO220-FP
Input Capacitance (Ciss) (Max) @ Vds: 8110 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: PG-TO220-FP
Vgs(th) (Max) @ Id: 3.5V @ 155µA
Power Dissipation (Max): 41W (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 75A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Bulk
Description: MOSFET N-CH 80V 75A TO220-FP
Input Capacitance (Ciss) (Max) @ Vds: 8110 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: PG-TO220-FP
Vgs(th) (Max) @ Id: 3.5V @ 155µA
Power Dissipation (Max): 41W (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 75A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Bulk
auf Bestellung 92863 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 105+ | 4.33 EUR |