Produkte > INFINEON TECHNOLOGIES > IPA037N08N3GXKSA1
IPA037N08N3GXKSA1

IPA037N08N3GXKSA1 INFINEON TECHNOLOGIES


IPA037N08N3G-DTE.pdf Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 75A; 41W; TO220FP
Mounting: THT
Drain-source voltage: 80V
Drain current: 75A
On-state resistance: 3.7mΩ
Type of transistor: N-MOSFET
Power dissipation: 41W
Polarisation: unipolar
Kind of package: tube
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: TO220FP
Anzahl je Verpackung: 1 Stücke
auf Bestellung 27 Stücke:

Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
17+4.38 EUR
19+ 3.79 EUR
27+ 2.65 EUR
Mindestbestellmenge: 17
Produktrezensionen
Produktbewertung abgeben

Technische Details IPA037N08N3GXKSA1 INFINEON TECHNOLOGIES

Description: MOSFET N-CH 80V 75A TO220-FP, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 75A (Tc), Rds On (Max) @ Id, Vgs: 3.7mOhm @ 75A, 10V, Power Dissipation (Max): 41W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 155µA, Supplier Device Package: PG-TO220-FP, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 8110 pF @ 40 V.

Weitere Produktangebote IPA037N08N3GXKSA1 nach Preis ab 2.65 EUR bis 7.62 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
IPA037N08N3GXKSA1 IPA037N08N3GXKSA1 Hersteller : INFINEON TECHNOLOGIES IPA037N08N3G-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 75A; 41W; TO220FP
Mounting: THT
Drain-source voltage: 80V
Drain current: 75A
On-state resistance: 3.7mΩ
Type of transistor: N-MOSFET
Power dissipation: 41W
Polarisation: unipolar
Kind of package: tube
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: TO220FP
auf Bestellung 27 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
17+4.38 EUR
19+ 3.79 EUR
27+ 2.65 EUR
Mindestbestellmenge: 17
IPA037N08N3GXKSA1 IPA037N08N3GXKSA1 Hersteller : Infineon Technologies IPA037N08N3_Rev2.0.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30431d8a6b3c011dce12d2e1353d Description: MOSFET N-CH 80V 75A TO220-FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 75A, 10V
Power Dissipation (Max): 41W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 155µA
Supplier Device Package: PG-TO220-FP
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8110 pF @ 40 V
auf Bestellung 336 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3+7.62 EUR
50+ 6.03 EUR
100+ 5.17 EUR
Mindestbestellmenge: 3
IPA037N08N3GXKSA1 IPA037N08N3GXKSA1 Hersteller : Infineon Technologies ipa037n08n3_rev2.1.pdf Trans MOSFET N-CH 80V 75A Automotive 3-Pin(3+Tab) TO-220FP Tube
auf Bestellung 560 Stücke:
Lieferzeit 14-21 Tag (e)