IPA037N08N3GXKSA1 INFINEON TECHNOLOGIES
Hersteller: INFINEON TECHNOLOGIESCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 75A; 41W; TO220FP
Mounting: THT
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Kind of package: tube
Case: TO220FP
Polarisation: unipolar
On-state resistance: 3.7mΩ
Power dissipation: 41W
Drain current: 75A
Gate-source voltage: ±20V
Drain-source voltage: 80V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 18 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 18+ | 3.98 EUR |
| 50+ | 2.79 EUR |
| 250+ | 2.52 EUR |
| 1000+ | 2.45 EUR |
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Technische Details IPA037N08N3GXKSA1 INFINEON TECHNOLOGIES
Description: MOSFET N-CH 80V 75A TO220-FP, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 75A (Tc), Rds On (Max) @ Id, Vgs: 3.7mOhm @ 75A, 10V, Power Dissipation (Max): 41W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 155µA, Supplier Device Package: PG-TO220-FP, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 8110 pF @ 40 V.
Weitere Produktangebote IPA037N08N3GXKSA1 nach Preis ab 3.98 EUR bis 4.3 EUR
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IPA037N08N3GXKSA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 75A; 41W; TO220FP Mounting: THT Kind of channel: enhancement Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Kind of package: tube Case: TO220FP Polarisation: unipolar On-state resistance: 3.7mΩ Power dissipation: 41W Drain current: 75A Gate-source voltage: ±20V Drain-source voltage: 80V |
auf Bestellung 18 Stücke: Lieferzeit 14-21 Tag (e) |
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IPA037N08N3GXKSA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 80V 75A TO220-FP Packaging: Bulk Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 3.7mOhm @ 75A, 10V Power Dissipation (Max): 41W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 155µA Supplier Device Package: PG-TO220-FP Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8110 pF @ 40 V |
auf Bestellung 89513 Stücke: Lieferzeit 10-14 Tag (e) |
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IPA037N08N3GXKSA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 80V 75A Automotive 3-Pin(3+Tab) TO-220FP Tube |
auf Bestellung 200 Stücke: Lieferzeit 14-21 Tag (e) |
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IPA037N08N3GXKSA1 | Hersteller : ROCHESTER ELECTRONICS |
Description: ROCHESTER ELECTRONICS - IPA037N08N3GXKSA1 - POWER FIELD-EFFECT TRANSISTOR, 75A, 80V, tariffCode: 85412100 productTraceability: No rohsCompliant: YES euEccn: TBC hazardous: false rohsPhthalatesCompliant: TBA usEccn: TBC SVHC: No SVHC (27-Jun-2024) |
auf Bestellung 490 Stücke: Lieferzeit 14-21 Tag (e) |
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IPA037N08N3GXKSA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 80V 75A TO220-FP Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 3.7mOhm @ 75A, 10V Power Dissipation (Max): 41W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 155µA Supplier Device Package: PG-TO220-FP Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8110 pF @ 40 V |
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