IPA083N10NM5SXKSA1 INFINEON TECHNOLOGIES
Hersteller: INFINEON TECHNOLOGIESCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 35A; Idm: 200A; 36W; TO220FP
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 35A
Pulsed drain current: 200A
Power dissipation: 36W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 8.3mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 485 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 34+ | 2.14 EUR |
| 38+ | 1.93 EUR |
| 43+ | 1.7 EUR |
| 48+ | 1.5 EUR |
| 51+ | 1.42 EUR |
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Technische Details IPA083N10NM5SXKSA1 INFINEON TECHNOLOGIES
Description: MOSFET N-CH 100V 50A TO220, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 50A (Tc), Rds On (Max) @ Id, Vgs: 8.3mOhm @ 25A, 10V, Power Dissipation (Max): 36W (Tc), Vgs(th) (Max) @ Id: 3.8V @ 49µA, Supplier Device Package: PG-TO220 Full Pack, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 50 V.
Weitere Produktangebote IPA083N10NM5SXKSA1 nach Preis ab 1.42 EUR bis 3.15 EUR
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IPA083N10NM5SXKSA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 35A; Idm: 200A; 36W; TO220FP Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 100V Drain current: 35A Pulsed drain current: 200A Power dissipation: 36W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 8.3mΩ Mounting: THT Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 485 Stücke: Lieferzeit 7-14 Tag (e) |
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| IPA083N10NM5SXKSA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 100V 50A TO220 Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 8.3mOhm @ 25A, 10V Power Dissipation (Max): 36W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 49µA Supplier Device Package: PG-TO220 Full Pack Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 50 V |
auf Bestellung 490 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPA083N10NM5SXKSA1 | Hersteller : Infineon Technologies |
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IPA083N10NM5SXKSA1 | Hersteller : Infineon Technologies |
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IPA083N10NM5SXKSA1 | Hersteller : Infineon Technologies |
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IPA083N10NM5SXKSA1 | Hersteller : Infineon Technologies |
MOSFET TRENCH >=100V |
Produkt ist nicht verfügbar |