
IPA105N15N3GXKSA1 INFINEON TECHNOLOGIES

Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 37A; 40.5W; TO220FP
Mounting: THT
Case: TO220FP
Power dissipation: 40.5W
Polarisation: unipolar
Kind of package: tube
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
Drain-source voltage: 150V
Drain current: 37A
On-state resistance: 10.5mΩ
Type of transistor: N-MOSFET
auf Bestellung 146 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis |
---|---|
12+ | 6.26 EUR |
14+ | 5.41 EUR |
16+ | 4.56 EUR |
17+ | 4.29 EUR |
100+ | 4.13 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details IPA105N15N3GXKSA1 INFINEON TECHNOLOGIES
Description: MOSFET N-CH 150V 37A TO220-FP, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 37A (Tc), Rds On (Max) @ Id, Vgs: 10.5mOhm @ 37A, 10V, Power Dissipation (Max): 40.5W (Tc), Vgs(th) (Max) @ Id: 4V @ 160µA, Supplier Device Package: PG-TO220-FP, Drive Voltage (Max Rds On, Min Rds On): 8V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 150 V, Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 75 V.
Weitere Produktangebote IPA105N15N3GXKSA1 nach Preis ab 4.13 EUR bis 9.89 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() |
IPA105N15N3GXKSA1 | Hersteller : INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 150V; 37A; 40.5W; TO220FP Mounting: THT Case: TO220FP Power dissipation: 40.5W Polarisation: unipolar Kind of package: tube Technology: OptiMOS™ 3 Kind of channel: enhancement Gate-source voltage: ±20V Drain-source voltage: 150V Drain current: 37A On-state resistance: 10.5mΩ Type of transistor: N-MOSFET Anzahl je Verpackung: 1 Stücke |
auf Bestellung 146 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||||||||
![]() |
IPA105N15N3GXKSA1 | Hersteller : Infineon Technologies |
![]() Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 37A (Tc) Rds On (Max) @ Id, Vgs: 10.5mOhm @ 37A, 10V Power Dissipation (Max): 40.5W (Tc) Vgs(th) (Max) @ Id: 4V @ 160µA Supplier Device Package: PG-TO220-FP Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 75 V |
auf Bestellung 64 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
![]() |
IPA105N15N3GXKSA1 | Hersteller : Infineon Technologies |
![]() |
auf Bestellung 576 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
![]() |
IPA105N15N3GXKSA1 | Hersteller : Infineon Technologies |
![]() |
auf Bestellung 400 Stücke: Lieferzeit 14-21 Tag (e) |
|||||||||||||
IPA105N15N3GXKSA1 | Hersteller : Infineon |
![]() Anzahl je Verpackung: 2 Stücke |
auf Bestellung 10 Stücke: Lieferzeit 7-14 Tag (e) |
|
|||||||||||||
IPA105N15N3GXKSA1 Produktcode: 125683
zu Favoriten hinzufügen
Lieblingsprodukt
|
![]() |
Produkt ist nicht verfügbar
|