IPA126N10N3GXKSA1 Infineon Technologies
Hersteller: Infineon TechnologiesDescription: MOSFET N-CH 100V 35A TO220-FP
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 12.6mOhm @ 35A, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 45µA
Supplier Device Package: PG-TO220 Full Pack
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 50 V
auf Bestellung 1800 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 368+ | 1.37 EUR |
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Technische Details IPA126N10N3GXKSA1 Infineon Technologies
Description: MOSFET N-CH 100V 35A TO220-FP, Packaging: Bulk, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 35A (Tc), Rds On (Max) @ Id, Vgs: 12.6mOhm @ 35A, 10V, Power Dissipation (Max): 33W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 45µA, Supplier Device Package: PG-TO220 Full Pack, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 50 V.
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IPA126N10N3GXKSA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 100V 35A TO220-FP Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Rds On (Max) @ Id, Vgs: 12.6mOhm @ 35A, 10V Power Dissipation (Max): 33W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 45µA Supplier Device Package: PG-TO220 Full Pack Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 50 V |
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