IPA180N10N3G Infineon Technologies

Description: 28A, 100V, 0.018OHM, N-CHANNEL,, Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Part Status: Active, Supplier Device Package: PG-TO220-3-111, Vgs(th) (Max) @ Id: 3.5V @ 35µA, Power Dissipation (Max): 30W (Tc), Rds On (Max) @ Id, Vgs: 18mOhm @ 28A, 10V, Current - Continuous Drain (Id) @ 25°C: 28A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3 Full Pack, Packaging: Bulk.