IPA60R060P7 Infineon Technologies
| Anzahl | Preis |
|---|---|
| 15+ | 10.18 EUR |
| 25+ | 9.39 EUR |
| 50+ | 8.7 EUR |
| 100+ | 8.08 EUR |
| 250+ | 7.52 EUR |
| 500+ | 7.01 EUR |
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Technische Details IPA60R060P7 Infineon Technologies
Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 29W; TO220FP, Type of transistor: N-MOSFET, Technology: CoolMOS™ P7, Polarisation: unipolar, Drain-source voltage: 600V, Drain current: 30A, Power dissipation: 29W, Case: TO220FP, Gate-source voltage: ±20V, On-state resistance: 60mΩ, Mounting: THT, Kind of package: tube, Kind of channel: enhancement.
Weitere Produktangebote IPA60R060P7
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IPA60R060P7 | Hersteller : Infineon Technologies |
 MOSFETs HIGH POWER_NEW |
Produkt ist nicht verfügbar |
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IPA60R060P7 | Hersteller : INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 29W; TO220FP Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 600V Drain current: 30A Power dissipation: 29W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 60mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |