IPA60R099P7 INFINEON TECHNOLOGIES
Hersteller: INFINEON TECHNOLOGIESCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; 29W; TO220FP
Power dissipation: 29W
Polarisation: unipolar
Kind of package: tube
Technology: CoolMOS™ P7
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
Case: TO220FP
Drain-source voltage: 600V
Drain current: 20A
On-state resistance: 99mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
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Technische Details IPA60R099P7 INFINEON TECHNOLOGIES
Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 600V; 20A; 29W; TO220FP, Power dissipation: 29W, Polarisation: unipolar, Kind of package: tube, Technology: CoolMOS™ P7, Kind of channel: enhancement, Gate-source voltage: ±20V, Mounting: THT, Case: TO220FP, Drain-source voltage: 600V, Drain current: 20A, On-state resistance: 99mΩ, Type of transistor: N-MOSFET, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote IPA60R099P7
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IPA60R099P7 | Hersteller : Infineon Technologies | Infineon HIGH POWER_NEW |
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IPA60R099P7 | Hersteller : INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 20A; 29W; TO220FP Power dissipation: 29W Polarisation: unipolar Kind of package: tube Technology: CoolMOS™ P7 Kind of channel: enhancement Gate-source voltage: ±20V Mounting: THT Case: TO220FP Drain-source voltage: 600V Drain current: 20A On-state resistance: 99mΩ Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |