auf Bestellung 473 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 7.41 EUR |
| 10+ | 6.23 EUR |
| 25+ | 5.88 EUR |
| 100+ | 5.03 EUR |
| 250+ | 4.77 EUR |
| 500+ | 4.42 EUR |
| 1000+ | 3.61 EUR |
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Technische Details IPA60R120C7XKSA1 Infineon Technologies
Description: MOSFET N-CH 600V 11A TO220, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 11A (Tc), Rds On (Max) @ Id, Vgs: 120mOhm @ 7.8A, 10V, Power Dissipation (Max): 32W (Tc), Vgs(th) (Max) @ Id: 4V @ 390µA, Supplier Device Package: PG-TO220-FP, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 400 V.
Weitere Produktangebote IPA60R120C7XKSA1 nach Preis ab 5.07 EUR bis 14.3 EUR
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IPA60R120C7XKSA1 | Hersteller : Infineon Technologies |
 Description: MOSFET N-CH 600V 11A TO220Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 120mOhm @ 7.8A, 10V Power Dissipation (Max): 32W (Tc) Vgs(th) (Max) @ Id: 4V @ 390µA Supplier Device Package: PG-TO220-FP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 400 V |
auf Bestellung 385 Stücke: Lieferzeit 10-14 Tag (e) |
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IPA60R120C7XKSA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 7A; Idm: 66A; 32W; TO220FP Type of transistor: N-MOSFET Technology: CoolMOS™ C7 Polarisation: unipolar Drain-source voltage: 650V Drain current: 7A Pulsed drain current: 66A Power dissipation: 32W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 0.12Ω Mounting: THT Gate charge: 34nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 5 Stücke: Lieferzeit 7-14 Tag (e) |
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IPA60R120C7XKSA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 7A; Idm: 66A; 32W; TO220FP Type of transistor: N-MOSFET Technology: CoolMOS™ C7 Polarisation: unipolar Drain-source voltage: 650V Drain current: 7A Pulsed drain current: 66A Power dissipation: 32W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 0.12Ω Mounting: THT Gate charge: 34nC Kind of package: tube Kind of channel: enhanced |
auf Bestellung 5 Stücke: Lieferzeit 14-21 Tag (e) |
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IPA60R120C7XKSA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 600V 11A 3-Pin(3+Tab) TO-220FP Tube |
Produkt ist nicht verfügbar |
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IPA60R120C7XKSA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 600V 11A 3-Pin(3+Tab) TO-220FP Tube |
Produkt ist nicht verfügbar |