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Technische Details IPA60R120C7XKSA1 Rochester Electronics
Description: MOSFET N-CH 600V 11A TO220, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 11A (Tc), Rds On (Max) @ Id, Vgs: 120mOhm @ 7.8A, 10V, Power Dissipation (Max): 32W (Tc), Vgs(th) (Max) @ Id: 4V @ 390µA, Supplier Device Package: PG-TO220-FP, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 400 V.
Weitere Produktangebote IPA60R120C7XKSA1
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
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IPA60R120C7XKSA1 | Infineon Technologies |
 Description: MOSFET N-CH 600V 11A TO220Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 120mOhm @ 7.8A, 10V Power Dissipation (Max): 32W (Tc) Vgs(th) (Max) @ Id: 4V @ 390µA Supplier Device Package: PG-TO220-FP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 400 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IPA60R120C7XKSA1 | Infineon Technologies |
MOSFETs HIGH POWER_NEW |
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Im Einkaufswagen Stück im Wert von UAH |
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IPA60R120C7XKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 7A; Idm: 66A; 32W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 7A Power dissipation: 32W Case: TO220FP On-state resistance: 0.12Ω Mounting: THT Gate charge: 34nC Kind of channel: enhancement Technology: CoolMOS™ C7 Kind of package: tube Gate-source voltage: ±20V Pulsed drain current: 66A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| IPA60R120C7XKSA1 |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 11A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 7.8A, 10V
Power Dissipation (Max): 32W (Tc)
Vgs(th) (Max) @ Id: 4V @ 390µA
Supplier Device Package: PG-TO220-FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 400 V
Description: MOSFET N-CH 600V 11A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 7.8A, 10V
Power Dissipation (Max): 32W (Tc)
Vgs(th) (Max) @ Id: 4V @ 390µA
Supplier Device Package: PG-TO220-FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 400 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IPA60R120C7XKSA1 |
|
Hersteller: Infineon Technologies
MOSFETs HIGH POWER_NEW
MOSFETs HIGH POWER_NEW
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IPA60R120C7XKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 7A; Idm: 66A; 32W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 7A
Power dissipation: 32W
Case: TO220FP
On-state resistance: 0.12Ω
Mounting: THT
Gate charge: 34nC
Kind of channel: enhancement
Technology: CoolMOS™ C7
Kind of package: tube
Gate-source voltage: ±20V
Pulsed drain current: 66A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 7A; Idm: 66A; 32W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 7A
Power dissipation: 32W
Case: TO220FP
On-state resistance: 0.12Ω
Mounting: THT
Gate charge: 34nC
Kind of channel: enhancement
Technology: CoolMOS™ C7
Kind of package: tube
Gate-source voltage: ±20V
Pulsed drain current: 66A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH