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Technische Details IPA60R120P7 Infineon Technologies
Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 28W; TO220FP, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 600V, Drain current: 16A, Power dissipation: 28W, Case: TO220FP, On-state resistance: 0.12Ω, Mounting: THT, Kind of channel: enhancement, Technology: CoolMOS™ P7, Kind of package: tube, Gate-source voltage: ±20V.
Weitere Produktangebote IPA60R120P7
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
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IPA60R120P7 | INFINEON TECHNOLOGIES |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 16A; 28W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 16A Power dissipation: 28W Case: TO220FP On-state resistance: 0.12Ω Mounting: THT Kind of channel: enhancement Technology: CoolMOS™ P7 Kind of package: tube Gate-source voltage: ±20V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| IPA60R120P7 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 28W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 16A
Power dissipation: 28W
Case: TO220FP
On-state resistance: 0.12Ω
Mounting: THT
Kind of channel: enhancement
Technology: CoolMOS™ P7
Kind of package: tube
Gate-source voltage: ±20V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 28W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 16A
Power dissipation: 28W
Case: TO220FP
On-state resistance: 0.12Ω
Mounting: THT
Kind of channel: enhancement
Technology: CoolMOS™ P7
Kind of package: tube
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH