Technische Details IPA60R1K0CEXKSA1 Infineon Technologies
Description: MOSFET N-CH 600V 6.8A TO220, Rds On (Max) @ Id, Vgs: 1Ohm @ 1.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -40°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3 Full Pack, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: PG-TO220-FP, Vgs(th) (Max) @ Id: 3.5V @ 130µA, Power Dissipation (Max): 26W (Tc).
Weitere Produktangebote IPA60R1K0CEXKSA1 nach Preis ab 0.53 EUR bis 2.01 EUR
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IPA60R1K0CEXKSA1 | Infineon Technologies |
 MOSFETs CONSUMER |
auf Bestellung 498 Stücke: Lieferzeit 10-14 Tag (e) |
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IPA60R1K0CEXKSA1 | Infineon Technologies |
Description: MOSFET N-CH 600V 6.8A TO220 Rds On (Max) @ Id, Vgs: 1Ohm @ 1.5A, 10V Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: PG-TO220-FP Vgs(th) (Max) @ Id: 3.5V @ 130µA Power Dissipation (Max): 26W (Tc) |
auf Bestellung 336 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPA60R1K0CEXKSA1 |
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Hersteller: Infineon Technologies
MOSFETs CONSUMER
MOSFETs CONSUMER
auf Bestellung 498 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 1.99 EUR |
| 10+ | 0.93 EUR |
| 100+ | 0.83 EUR |
| 500+ | 0.7 EUR |
| 1000+ | 0.54 EUR |
| 2500+ | 0.53 EUR |
| IPA60R1K0CEXKSA1 |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 6.8A TO220
Rds On (Max) @ Id, Vgs: 1Ohm @ 1.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO220-FP
Vgs(th) (Max) @ Id: 3.5V @ 130µA
Power Dissipation (Max): 26W (Tc)
Description: MOSFET N-CH 600V 6.8A TO220
Rds On (Max) @ Id, Vgs: 1Ohm @ 1.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO220-FP
Vgs(th) (Max) @ Id: 3.5V @ 130µA
Power Dissipation (Max): 26W (Tc)
auf Bestellung 336 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 9+ | 2.01 EUR |
| 50+ | 1 EUR |
| 100+ | 0.93 EUR |