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Technische Details IPA60R280P7 Infineon Technologies
Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 600V; 8A; 24W; TO220FP, Type of transistor: N-MOSFET, On-state resistance: 0.28Ω, Mounting: THT, Power dissipation: 24W, Polarisation: unipolar, Technology: CoolMOS™ P7, Drain current: 8A, Kind of channel: enhancement, Drain-source voltage: 600V, Gate-source voltage: ±20V, Kind of package: tube, Case: TO220FP.
Weitere Produktangebote IPA60R280P7
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
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IPA60R280P7 | INFINEON TECHNOLOGIES |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 8A; 24W; TO220FP Type of transistor: N-MOSFET On-state resistance: 0.28Ω Mounting: THT Power dissipation: 24W Polarisation: unipolar Technology: CoolMOS™ P7 Drain current: 8A Kind of channel: enhancement Drain-source voltage: 600V Gate-source voltage: ±20V Kind of package: tube Case: TO220FP |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| IPA60R280P7 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8A; 24W; TO220FP
Type of transistor: N-MOSFET
On-state resistance: 0.28Ω
Mounting: THT
Power dissipation: 24W
Polarisation: unipolar
Technology: CoolMOS™ P7
Drain current: 8A
Kind of channel: enhancement
Drain-source voltage: 600V
Gate-source voltage: ±20V
Kind of package: tube
Case: TO220FP
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8A; 24W; TO220FP
Type of transistor: N-MOSFET
On-state resistance: 0.28Ω
Mounting: THT
Power dissipation: 24W
Polarisation: unipolar
Technology: CoolMOS™ P7
Drain current: 8A
Kind of channel: enhancement
Drain-source voltage: 600V
Gate-source voltage: ±20V
Kind of package: tube
Case: TO220FP
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH