IPA60R299CP Infineon Technologies
| Anzahl | Preis |
|---|---|
| 1+ | 4.8 EUR |
| 10+ | 3.13 EUR |
| 100+ | 2.41 EUR |
| 500+ | 2.01 EUR |
| 1000+ | 1.74 EUR |
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Technische Details IPA60R299CP Infineon Technologies
Description: 600V COOLMOS POWER TRANSISTOR, Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: PG-TO220-3-31, Vgs(th) (Max) @ Id: 3.5V @ 440µA, Power Dissipation (Max): 33W (Tc), Rds On (Max) @ Id, Vgs: 299mOhm @ 6.6A, 10V, Current - Continuous Drain (Id) @ 25°C: 11A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3 Full Pack, Packaging: Bulk.
Weitere Produktangebote IPA60R299CP
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
| IPA60R299CP | Infineon |
 MOSFET N-Ch 600V 11A TO220FP-3 CoolMOS CP, TO-220FP-3 Транзистори |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
 |
IPA60R299CP | Infineon Technologies |
Description: 600V COOLMOS POWER TRANSISTOR Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: PG-TO220-3-31 Vgs(th) (Max) @ Id: 3.5V @ 440µA Power Dissipation (Max): 33W (Tc) Rds On (Max) @ Id, Vgs: 299mOhm @ 6.6A, 10V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Packaging: Bulk |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| IPA60R299CP |
|
Hersteller: Infineon
MOSFET N-Ch 600V 11A TO220FP-3 CoolMOS CP, TO-220FP-3 Транзистори
MOSFET N-Ch 600V 11A TO220FP-3 CoolMOS CP, TO-220FP-3 Транзистори
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IPA60R299CP |
|
Hersteller: Infineon Technologies
Description: 600V COOLMOS POWER TRANSISTOR
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO220-3-31
Vgs(th) (Max) @ Id: 3.5V @ 440µA
Power Dissipation (Max): 33W (Tc)
Rds On (Max) @ Id, Vgs: 299mOhm @ 6.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Bulk
Description: 600V COOLMOS POWER TRANSISTOR
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO220-3-31
Vgs(th) (Max) @ Id: 3.5V @ 440µA
Power Dissipation (Max): 33W (Tc)
Rds On (Max) @ Id, Vgs: 299mOhm @ 6.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH