
IPA60R385CP Infineon Technologies
auf Bestellung 157 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
---|---|
1+ | 4.22 EUR |
10+ | 3.03 EUR |
100+ | 2.31 EUR |
250+ | 2.02 EUR |
500+ | 1.81 EUR |
2500+ | 1.80 EUR |
5000+ | 1.78 EUR |
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Technische Details IPA60R385CP Infineon Technologies
Description: IPA60R385 - 600V COOLMOS N-CHANN, Packaging: Bulk, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 9A (Tc), Rds On (Max) @ Id, Vgs: 385mOhm @ 5.2A, 10V, Power Dissipation (Max): 31W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 340µA, Supplier Device Package: PG-TO220-3-31, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 100 V.
Weitere Produktangebote IPA60R385CP
Foto | Bezeichnung | Hersteller | Beschreibung |
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IPA60R385CP | Hersteller : INFINEON |
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auf Bestellung 2100 Stücke: Lieferzeit 21-28 Tag (e) |
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IPA60R385CP | Hersteller : Infineon |
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auf Bestellung 66 Stücke: Lieferzeit 21-28 Tag (e) |
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IPA60R385CP | Hersteller : Infineon Technologies |
![]() Packaging: Bulk Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Rds On (Max) @ Id, Vgs: 385mOhm @ 5.2A, 10V Power Dissipation (Max): 31W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 340µA Supplier Device Package: PG-TO220-3-31 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 100 V |
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