IPA60R385CP

IPA60R385CP Infineon Technologies


Infineon_IPA60R385CP_DS_v02_03_EN-3362441.pdf Hersteller: Infineon Technologies
MOSFET N-Ch 600V 9A TO220FP-3 CoolMOS CP
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Lieferzeit 14-28 Tag (e)
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100+ 4.42 EUR
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Technische Details IPA60R385CP Infineon Technologies

Description: IPA60R385 - 600V COOLMOS N-CHANN, Packaging: Bulk, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 9A (Tc), Rds On (Max) @ Id, Vgs: 385mOhm @ 5.2A, 10V, Power Dissipation (Max): 31W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 340µA, Supplier Device Package: PG-TO220-3-31, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 100 V.

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IPA60R385CP Hersteller : INFINEON INFN-S-A0004583177-1.pdf?t.download=true&u=5oefqw
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IPA60R385CP Hersteller : Infineon INFN-S-A0004583177-1.pdf?t.download=true&u=5oefqw 09+
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Lieferzeit 21-28 Tag (e)
IPA60R385CP Hersteller : Infineon Technologies INFN-S-A0004583177-1.pdf?t.download=true&u=5oefqw Description: IPA60R385 - 600V COOLMOS N-CHANN
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 385mOhm @ 5.2A, 10V
Power Dissipation (Max): 31W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 340µA
Supplier Device Package: PG-TO220-3-31
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 100 V
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