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IPA60R520C6XKSA1

IPA60R520C6XKSA1 Infineon Technologies


IPA60R520C6.pdf Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 8.1A TO220-FP
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.1A (Tc)
Rds On (Max) @ Id, Vgs: 520mOhm @ 2.8A, 10V
Power Dissipation (Max): 29W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 230µA
Supplier Device Package: PG-TO220-FP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 23.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 512 pF @ 100 V
auf Bestellung 111009 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
424+1.15 EUR
Mindestbestellmenge: 424
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Technische Details IPA60R520C6XKSA1 Infineon Technologies

Description: MOSFET N-CH 600V 8.1A TO220-FP, Packaging: Bulk, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 8.1A (Tc), Rds On (Max) @ Id, Vgs: 520mOhm @ 2.8A, 10V, Power Dissipation (Max): 29W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 230µA, Supplier Device Package: PG-TO220-FP, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 23.4 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 512 pF @ 100 V.

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IPA60R520C6XKSA1 IPA60R520C6XKSA1 Hersteller : Infineon Technologies Infineon-IPA60R520C6-DS-v02_02-EN-1225937.pdf MOSFET N-Ch 600V 8.1A TO220FP-3 CoolMOS C6
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Lieferzeit 10-14 Tag (e)
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IPA60R520C6XKSA1 Hersteller : ROCHESTER ELECTRONICS IPA60R520C6.pdf Description: ROCHESTER ELECTRONICS - IPA60R520C6XKSA1 - IPA60R520 - 600V COOLMOS N-CHANNEL POWER
euEccn: TBC
hazardous: false
productTraceability: Yes-Date/Lot Code
usEccn: TBC
SVHC: No SVHC (27-Jun-2024)
auf Bestellung 111009 Stücke:
Lieferzeit 14-21 Tag (e)
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IPA60R520C6XKSA1 IPA60R520C6XKSA1 Hersteller : Infineon Technologies IPA60R520C6.pdf Description: MOSFET N-CH 600V 8.1A TO220-FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.1A (Tc)
Rds On (Max) @ Id, Vgs: 520mOhm @ 2.8A, 10V
Power Dissipation (Max): 29W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 230µA
Supplier Device Package: PG-TO220-FP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 23.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 512 pF @ 100 V
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Im Einkaufswagen  Stück im Wert von  UAH