IPA60R520C6XKSA1 Infineon Technologies
Hersteller: Infineon TechnologiesDescription: MOSFET N-CH 600V 8.1A TO220-FP
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.1A (Tc)
Rds On (Max) @ Id, Vgs: 520mOhm @ 2.8A, 10V
Power Dissipation (Max): 29W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 230µA
Supplier Device Package: PG-TO220-FP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 23.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 512 pF @ 100 V
auf Bestellung 111009 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 424+ | 1.15 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details IPA60R520C6XKSA1 Infineon Technologies
Description: MOSFET N-CH 600V 8.1A TO220-FP, Packaging: Bulk, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 8.1A (Tc), Rds On (Max) @ Id, Vgs: 520mOhm @ 2.8A, 10V, Power Dissipation (Max): 29W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 230µA, Supplier Device Package: PG-TO220-FP, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 23.4 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 512 pF @ 100 V.
Weitere Produktangebote IPA60R520C6XKSA1 nach Preis ab 0.8 EUR bis 1.5 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
IPA60R520C6XKSA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 600V 8.1A 3-Pin(3+Tab) TO-220FP Tube |
auf Bestellung 110020 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
|
|
IPA60R520C6XKSA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 600V 8.1A 3-Pin(3+Tab) TO-220FP Tube |
auf Bestellung 989 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
 |
IPA60R520C6XKSA1 | Hersteller : Infineon Technologies |
MOSFET N-Ch 600V 8.1A TO220FP-3 CoolMOS C6 |
auf Bestellung 120 Stücke: Lieferzeit 10-14 Tag (e) |
|||||||||||||
| IPA60R520C6XKSA1 | Hersteller : ROCHESTER ELECTRONICS |
Description: ROCHESTER ELECTRONICS - IPA60R520C6XKSA1 - IPA60R520 - 600V COOLMOS N-CHANNEL POWER euEccn: TBC hazardous: false productTraceability: Yes-Date/Lot Code usEccn: TBC SVHC: No SVHC (27-Jun-2024) |
auf Bestellung 111009 Stücke: Lieferzeit 14-21 Tag (e) |
||||||||||||||
|
|
IPA60R520C6XKSA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 600V 8.1A TO220-FP Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.1A (Tc) Rds On (Max) @ Id, Vgs: 520mOhm @ 2.8A, 10V Power Dissipation (Max): 29W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 230µA Supplier Device Package: PG-TO220-FP Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 23.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 512 pF @ 100 V |
Produkt ist nicht verfügbar |