IPA65R095C7XKSA1 Infineon Technologies
| Anzahl | Preis |
|---|---|
| 1+ | 7.29 EUR |
| 10+ | 4.28 EUR |
| 100+ | 3.98 EUR |
| 500+ | 3.36 EUR |
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Technische Details IPA65R095C7XKSA1 Infineon Technologies
Description: MOSFET N-CH 650V 12A TO220-FP, Input Capacitance (Ciss) (Max) @ Vds: 2140 pF @ 400 V, Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V, Drain to Source Voltage (Vdss): 650 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: PG-TO220-FP, Vgs(th) (Max) @ Id: 4V @ 590µA, Power Dissipation (Max): 34W (Tc), Rds On (Max) @ Id, Vgs: 95mOhm @ 11.8A, 10V, Current - Continuous Drain (Id) @ 25°C: 12A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3 Full Pack, Packaging: Tube.
Weitere Produktangebote IPA65R095C7XKSA1 nach Preis ab 3.94 EUR bis 7.41 EUR
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IPA65R095C7XKSA1 | Infineon Technologies |
 Description: MOSFET N-CH 650V 12A TO220-FPInput Capacitance (Ciss) (Max) @ Vds: 2140 pF @ 400 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: PG-TO220-FP Vgs(th) (Max) @ Id: 4V @ 590µA Power Dissipation (Max): 34W (Tc) Rds On (Max) @ Id, Vgs: 95mOhm @ 11.8A, 10V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Packaging: Tube |
auf Bestellung 300 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPA65R095C7XKSA1 |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 12A TO220-FP
Input Capacitance (Ciss) (Max) @ Vds: 2140 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO220-FP
Vgs(th) (Max) @ Id: 4V @ 590µA
Power Dissipation (Max): 34W (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 11.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Description: MOSFET N-CH 650V 12A TO220-FP
Input Capacitance (Ciss) (Max) @ Vds: 2140 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO220-FP
Vgs(th) (Max) @ Id: 4V @ 590µA
Power Dissipation (Max): 34W (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 11.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
auf Bestellung 300 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 7.41 EUR |
| 50+ | 4.2 EUR |
| 100+ | 3.94 EUR |