IPA65R280C6 Infineon Technologies
| Anzahl | Privatkunde |
|---|---|
| 1+ | 6.39 EUR |
| 10+ | 4.16 EUR |
| 100+ | 2.92 EUR |
| 500+ | 2.43 EUR |
| 1000+ | 2.26 EUR |
| 2500+ | 2.12 EUR |
| 5000+ | 1.93 EUR |
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Technische Details IPA65R280C6 Infineon Technologies
Description: POWER FIELD-EFFECT TRANSISTOR, 6, Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3 Full Pack, Packaging: Bulk, Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V, Drain to Source Voltage (Vdss): 650 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: PG-TO220-3-111, Vgs(th) (Max) @ Id: 3.5V @ 440µA, Power Dissipation (Max): 32W (Tc), Rds On (Max) @ Id, Vgs: 280mOhm @ 4.4A, 10V, Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide).
Weitere Produktangebote IPA65R280C6
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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IPA65R280C6 | Infineon Technologies |
 Description: POWER FIELD-EFFECT TRANSISTOR, 6Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Packaging: Bulk Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: PG-TO220-3-111 Vgs(th) (Max) @ Id: 3.5V @ 440µA Power Dissipation (Max): 32W (Tc) Rds On (Max) @ Id, Vgs: 280mOhm @ 4.4A, 10V Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| IPA65R280C6 |
|
Hersteller: Infineon Technologies
Description: POWER FIELD-EFFECT TRANSISTOR, 6
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO220-3-111
Vgs(th) (Max) @ Id: 3.5V @ 440µA
Power Dissipation (Max): 32W (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 4.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Description: POWER FIELD-EFFECT TRANSISTOR, 6
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO220-3-111
Vgs(th) (Max) @ Id: 3.5V @ 440µA
Power Dissipation (Max): 32W (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 4.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH