IPA65R310CFDXKSA1 Infineon Technologies
auf Bestellung 500 Stücke:
Lieferzeit 375-379 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 5.26 EUR |
| 10+ | 4.73 EUR |
| 100+ | 3.87 EUR |
| 500+ | 3.29 EUR |
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Technische Details IPA65R310CFDXKSA1 Infineon Technologies
Description: MOSFET N-CH 650V 11.4A TO220, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 11.4A (Tc), Rds On (Max) @ Id, Vgs: 310mOhm @ 4.4A, 10V, Power Dissipation (Max): 32W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 440µA, Supplier Device Package: PG-TO220-3-111, Part Status: Last Time Buy, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V.
Weitere Produktangebote IPA65R310CFDXKSA1
| Foto | Bezeichnung | Hersteller | Beschreibung |
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IPA65R310CFDXKSA1 | Hersteller : INFINEON TECHNOLOGIES |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 11.4A; 32W; TO220FP Drain-source voltage: 650V Drain current: 11.4A On-state resistance: 0.31Ω Type of transistor: N-MOSFET Power dissipation: 32W Polarisation: unipolar Case: TO220FP Mounting: THT Kind of package: tube Technology: CoolMOS™ Kind of channel: enhanced Gate-source voltage: ±20V Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IPA65R310CFDXKSA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 650V 11.4A 3-Pin(3+Tab) TO-220FP Tube |
Produkt ist nicht verfügbar |
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IPA65R310CFDXKSA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 700V 11.4A 3-Pin(3+Tab) TO-220FP Tube |
Produkt ist nicht verfügbar |
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IPA65R310CFDXKSA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 650V 11.4A TO220 Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11.4A (Tc) Rds On (Max) @ Id, Vgs: 310mOhm @ 4.4A, 10V Power Dissipation (Max): 32W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 440µA Supplier Device Package: PG-TO220-3-111 Part Status: Last Time Buy Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V |
Produkt ist nicht verfügbar |
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IPA65R310CFDXKSA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 11.4A; 32W; TO220FP Drain-source voltage: 650V Drain current: 11.4A On-state resistance: 0.31Ω Type of transistor: N-MOSFET Power dissipation: 32W Polarisation: unipolar Case: TO220FP Mounting: THT Kind of package: tube Technology: CoolMOS™ Kind of channel: enhanced Gate-source voltage: ±20V |
Produkt ist nicht verfügbar |