IPA65R380C6XKSA1 Infineon Technologies
auf Bestellung 392 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 292+ | 1.86 EUR |
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Technische Details IPA65R380C6XKSA1 Infineon Technologies
Description: MOSFET N-CH 650V 10.6A TO220, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 10.6A (Tc), Rds On (Max) @ Id, Vgs: 380mOhm @ 3.2A, 10V, Power Dissipation (Max): 31W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 320µA, Supplier Device Package: PG-TO220-3-111, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 100 V.
Weitere Produktangebote IPA65R380C6XKSA1 nach Preis ab 1.39 EUR bis 2.2 EUR
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IPA65R380C6XKSA1 | Hersteller : INFINEON TECHNOLOGIES |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 10.6A; 31W; TO220FP Technology: CoolMOS™ Kind of channel: enhancement Type of transistor: N-MOSFET Mounting: THT Case: TO220FP Polarisation: unipolar On-state resistance: 0.38Ω Drain current: 10.6A Gate-source voltage: ±20V Power dissipation: 31W Drain-source voltage: 650V Kind of package: tube Anzahl je Verpackung: 1 Stücke |
auf Bestellung 450 Stücke: Lieferzeit 7-14 Tag (e) |
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IPA65R380C6XKSA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 10.6A; 31W; TO220FP Technology: CoolMOS™ Kind of channel: enhancement Type of transistor: N-MOSFET Mounting: THT Case: TO220FP Polarisation: unipolar On-state resistance: 0.38Ω Drain current: 10.6A Gate-source voltage: ±20V Power dissipation: 31W Drain-source voltage: 650V Kind of package: tube |
auf Bestellung 450 Stücke: Lieferzeit 14-21 Tag (e) |
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IPA65R380C6XKSA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 700V 10.6A 3-Pin(3+Tab) TO-220FP Tube |
Produkt ist nicht verfügbar |
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IPA65R380C6XKSA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 650V 10.6A 3-Pin(3+Tab) TO-220FP Tube |
Produkt ist nicht verfügbar |
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IPA65R380C6XKSA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 650V 10.6A 3-Pin(3+Tab) TO-220FP Tube |
Produkt ist nicht verfügbar |
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IPA65R380C6XKSA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 650V 10.6A TO220 Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10.6A (Tc) Rds On (Max) @ Id, Vgs: 380mOhm @ 3.2A, 10V Power Dissipation (Max): 31W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 320µA Supplier Device Package: PG-TO220-3-111 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 100 V |
Produkt ist nicht verfügbar |
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IPA65R380C6XKSA1 | Hersteller : Infineon Technologies |
MOSFETs LOW POWER_LEGACY |
Produkt ist nicht verfügbar |