IPA65R420CFD Infineon Technologies
Hersteller: Infineon TechnologiesDescription: IPA65R420 - 650V AND 700V COOLMO
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.7A (Tc)
Rds On (Max) @ Id, Vgs: 420mOhm @ 3.4A, 10V
Power Dissipation (Max): 31.2W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 300µA
Supplier Device Package: PG-TO220-3-111
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 31.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 100 V
auf Bestellung 975 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 262+ | 1.92 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details IPA65R420CFD Infineon Technologies
Description: IPA65R420 - 650V AND 700V COOLMO, Packaging: Bulk, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 8.7A (Tc), Rds On (Max) @ Id, Vgs: 420mOhm @ 3.4A, 10V, Power Dissipation (Max): 31.2W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 300µA, Supplier Device Package: PG-TO220-3-111, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 31.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 100 V.
Weitere Produktangebote IPA65R420CFD
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
 |
IPA65R420CFD | Hersteller : Infineon Technologies |
MOSFET N-Ch 650V 8.7A TO220FP CoolMOS CFD2 |
Produkt ist nicht verfügbar |