IPA80R1K4CEXKSA1 ROCHESTER ELECTRONICS
Hersteller: ROCHESTER ELECTRONICSDescription: ROCHESTER ELECTRONICS - IPA80R1K4CEXKSA1 - IPA80R1K4 - 800V COOLMOS N-CHANNEL POWER
tariffCode: 85412900
euEccn: TBC
hazardous: false
productTraceability: No
usEccn: TBC
SVHC: No SVHC (27-Jun-2024)
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)
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Technische Details IPA80R1K4CEXKSA1 ROCHESTER ELECTRONICS
Description: MOSFET N-CH 800V 2.8A TO220, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc), Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2.3A, 10V, Power Dissipation (Max): 31W (Tc), Vgs(th) (Max) @ Id: 3.9V @ 240µA, Supplier Device Package: PG-TO220-FP, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 800 V, Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 100 V.
Weitere Produktangebote IPA80R1K4CEXKSA1
| Foto | Bezeichnung | Hersteller | Beschreibung |
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IPA80R1K4CEXKSA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 800V 3.9A 3-Pin(3+Tab) TO-220FP |
Produkt ist nicht verfügbar |
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IPA80R1K4CEXKSA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 800V 2.8A TO220 Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc) Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2.3A, 10V Power Dissipation (Max): 31W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 240µA Supplier Device Package: PG-TO220-FP Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 100 V |
Produkt ist nicht verfügbar |