Weitere Produktangebote IPA80R750P7XKSA1 nach Preis ab 1.08 EUR bis 3.19 EUR
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IPA80R750P7XKSA1 | Infineon Technologies |
 MOSFETs LOW POWER_NEW |
auf Bestellung 388 Stücke: Lieferzeit 10-14 Tag (e) |
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IPA80R750P7XKSA1 | Infineon Technologies |
Description: MOSFET N-CHANNEL 800V 7A TO220 Part Status: Active Supplier Device Package: PG-TO220-FP Vgs(th) (Max) @ Id: 3.5V @ 140µA Power Dissipation (Max): 27W (Tc) Rds On (Max) @ Id, Vgs: 750mOhm @ 2.7A, 10V Current - Continuous Drain (Id) @ 25°C: 7A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 500 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Drain to Source Voltage (Vdss): 800 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V |
auf Bestellung 442 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPA80R750P7XKSA1 |
|
Hersteller: Infineon Technologies
MOSFETs LOW POWER_NEW
MOSFETs LOW POWER_NEW
auf Bestellung 388 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 2.96 EUR |
| 10+ | 1.78 EUR |
| 100+ | 1.59 EUR |
| 250+ | 1.57 EUR |
| 500+ | 1.27 EUR |
| 1000+ | 1.08 EUR |
| IPA80R750P7XKSA1 |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CHANNEL 800V 7A TO220
Part Status: Active
Supplier Device Package: PG-TO220-FP
Vgs(th) (Max) @ Id: 3.5V @ 140µA
Power Dissipation (Max): 27W (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 2.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 500 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Description: MOSFET N-CHANNEL 800V 7A TO220
Part Status: Active
Supplier Device Package: PG-TO220-FP
Vgs(th) (Max) @ Id: 3.5V @ 140µA
Power Dissipation (Max): 27W (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 2.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 500 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
auf Bestellung 442 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 6+ | 3.19 EUR |
| 50+ | 1.54 EUR |
| 100+ | 1.38 EUR |