IPAN70R450P7SXKSA1 Infineon Technologies
Hersteller: Infineon TechnologiesDescription: MOSFET N-CH 700V 10A TO220
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 2.3A, 10V
Power Dissipation (Max): 22.7W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 120µA
Supplier Device Package: PG-TO220-FP
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 13.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 424 pF @ 400 V
auf Bestellung 8489 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 567+ | 0.93 EUR |
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Technische Details IPAN70R450P7SXKSA1 Infineon Technologies
Description: MOSFET N-CH 700V 10A TO220, Packaging: Bulk, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 10A (Tc), Rds On (Max) @ Id, Vgs: 450mOhm @ 2.3A, 10V, Power Dissipation (Max): 22.7W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 120µA, Supplier Device Package: PG-TO220-FP, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±16V, Drain to Source Voltage (Vdss): 700 V, Gate Charge (Qg) (Max) @ Vgs: 13.1 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 424 pF @ 400 V.
Weitere Produktangebote IPAN70R450P7SXKSA1 nach Preis ab 0.9 EUR bis 1.43 EUR
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IPAN70R450P7SXKSA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 700V; 6.5A; 22.7W; TO220FP Power dissipation: 22.7W Case: TO220FP Mounting: THT Kind of package: tube Features of semiconductor devices: ESD protected gate Technology: CoolMOS™ P7 Gate charge: 13.1nC Polarisation: unipolar Drain current: 6.5A Kind of channel: enhanced Drain-source voltage: 700V Type of transistor: N-MOSFET Gate-source voltage: ±16V On-state resistance: 0.45Ω Anzahl je Verpackung: 1 Stücke |
auf Bestellung 208 Stücke: Lieferzeit 7-14 Tag (e) |
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IPAN70R450P7SXKSA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 700V; 6.5A; 22.7W; TO220FP Power dissipation: 22.7W Case: TO220FP Mounting: THT Kind of package: tube Features of semiconductor devices: ESD protected gate Technology: CoolMOS™ P7 Gate charge: 13.1nC Polarisation: unipolar Drain current: 6.5A Kind of channel: enhanced Drain-source voltage: 700V Type of transistor: N-MOSFET Gate-source voltage: ±16V On-state resistance: 0.45Ω |
auf Bestellung 208 Stücke: Lieferzeit 14-21 Tag (e) |
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IPAN70R450P7SXKSA1 | Hersteller : Infineon Technologies |
MOSFET CONSUMER |
auf Bestellung 1345 Stücke: Lieferzeit 10-14 Tag (e) |
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IPAN70R450P7SXKSA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 700V 10A 3-Pin(3+Tab) TO-220FP Tube |
auf Bestellung 500 Stücke: Lieferzeit 14-21 Tag (e) |
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IPAN70R450P7SXKSA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 700V 10A TO220 Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 450mOhm @ 2.3A, 10V Power Dissipation (Max): 22.7W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 120µA Supplier Device Package: PG-TO220-FP Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 700 V Gate Charge (Qg) (Max) @ Vgs: 13.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 424 pF @ 400 V |
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