Technische Details IPAN70R450P7SXKSA1 Infineon Technologies
Description: MOSFET N-CH 700V 10A TO220, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 10A (Tc), Rds On (Max) @ Id, Vgs: 450mOhm @ 2.3A, 10V, Power Dissipation (Max): 22.7W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 120µA, Supplier Device Package: PG-TO220-FP, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±16V, Drain to Source Voltage (Vdss): 700 V, Gate Charge (Qg) (Max) @ Vgs: 13.1 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 424 pF @ 400 V.
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| IPAN70R450P7SXKSA1 | Hersteller : INFINEON TECHNOLOGIES |
 IPAN70R450P7S THT N channel transistors |
auf Bestellung 199 Stücke: Lieferzeit 7-14 Tag (e) |
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IPAN70R450P7SXKSA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 700V 10A 3-Pin(3+Tab) TO-220FP Tube |
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IPAN70R450P7SXKSA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 700V 10A TO220 Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 450mOhm @ 2.3A, 10V Power Dissipation (Max): 22.7W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 120µA Supplier Device Package: PG-TO220-FP Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 700 V Gate Charge (Qg) (Max) @ Vgs: 13.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 424 pF @ 400 V |
Produkt ist nicht verfügbar |