IPAN80R360P7 Infineon Technologies

Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 800V; 8.6A; 30W; TO220FP; ESD, Type of transistor: N-MOSFET, Technology: CoolMOS™ P7, Polarisation: unipolar, Drain-source voltage: 800V, Drain current: 8.6A, Power dissipation: 30W, Case: TO220FP, Gate-source voltage: ±20V, On-state resistance: 0.36Ω, Mounting: THT, Gate charge: 30nC, Kind of package: tube, Kind of channel: enhancement, Version: ESD.