IPAW60R280CEXKSA1 Infineon Technologies
Hersteller: Infineon TechnologiesDescription: MOSFET N-CH 600V 19.3A TO220
Packaging: Bulk
Package / Case: TO-220-3 Full Pack, Variant
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19.3A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 6.5A, 10V
Power Dissipation (Max): 32W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 430µA
Supplier Device Package: PG-TO220 Full Pack, Wide Creepage
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 100 V
auf Bestellung 1800 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 275+ | 1.77 EUR |
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Technische Details IPAW60R280CEXKSA1 Infineon Technologies
Description: MOSFET N-CH 600V 19.3A TO220, Packaging: Bulk, Package / Case: TO-220-3 Full Pack, Variant, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 19.3A (Tc), Rds On (Max) @ Id, Vgs: 280mOhm @ 6.5A, 10V, Power Dissipation (Max): 32W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 430µA, Supplier Device Package: PG-TO220 Full Pack, Wide Creepage, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 100 V.
Weitere Produktangebote IPAW60R280CEXKSA1 nach Preis ab 1.85 EUR bis 3.63 EUR
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IPAW60R280CEXKSA1 | Hersteller : Infineon Technologies |
MOSFET CONSUMER |
auf Bestellung 1040 Stücke: Lieferzeit 10-14 Tag (e) |
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IPAW60R280CEXKSA1 | Hersteller : INFINEON |
Description: INFINEON - IPAW60R280CEXKSA1 - Leistungs-MOSFET, n-Kanal, 600 V, 19.3 A, 0.25 ohm, TO-220FP, Durchsteckmontage Transistormontage: Durchsteckmontage Drain-Source-Spannung Vds: 600 Dauer-Drainstrom Id: 19.3 Qualifikation: - Verlustleistung Pd: 32 Gate-Source-Schwellenspannung, max.: 3 Verlustleistung: 32 Bauform - Transistor: TO-220FP Anzahl der Pins: 3 Produktpalette: CoolMOS CE Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 0.25 Rds(on)-Prüfspannung: 10 Betriebstemperatur, max.: 150 Drain-Source-Durchgangswiderstand: 0.25 SVHC: No SVHC (08-Jul-2021) |
auf Bestellung 4 Stücke: Lieferzeit 14-21 Tag (e) |
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IPAW60R280CEXKSA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 600V 19.3A TO220 Packaging: Tube Package / Case: TO-220-3 Full Pack, Variant Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19.3A (Tc) Rds On (Max) @ Id, Vgs: 280mOhm @ 6.5A, 10V Power Dissipation (Max): 32W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 430µA Supplier Device Package: PG-TO220 Full Pack, Wide Creepage Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 100 V |
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