auf Bestellung 426 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 1.97 EUR |
| 10+ | 1.25 EUR |
| 100+ | 1.07 EUR |
| 900+ | 0.87 EUR |
| 2700+ | 0.82 EUR |
| 5400+ | 0.78 EUR |
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Technische Details IPAW60R360P7SXKSA1 Infineon Technologies
Description: MOSFET N-CH 650V 9A TO220, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 9A (Tc), Rds On (Max) @ Id, Vgs: 360mOhm @ 2.7A, 10V, Power Dissipation (Max): 22W (Tc), Vgs(th) (Max) @ Id: 4V @ 140µA, Supplier Device Package: PG-TO220 Full Pack, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 555 pF @ 400 V.
Weitere Produktangebote IPAW60R360P7SXKSA1 nach Preis ab 2.83 EUR bis 2.83 EUR
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IPAW60R360P7SXKSA1 | Hersteller : Infineon Technologies |
 Description: MOSFET N-CH 650V 9A TO220Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Rds On (Max) @ Id, Vgs: 360mOhm @ 2.7A, 10V Power Dissipation (Max): 22W (Tc) Vgs(th) (Max) @ Id: 4V @ 140µA Supplier Device Package: PG-TO220 Full Pack Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 555 pF @ 400 V |
auf Bestellung 30 Stücke: Lieferzeit 10-14 Tag (e) |
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IPAW60R360P7SXKSA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 600V 9A 3-Pin(3+Tab) TO-220FP Tube |
Produkt ist nicht verfügbar |
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IPAW60R360P7SXKSA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 600V 9A 3-Pin(3+Tab) TO-220FP Tube |
Produkt ist nicht verfügbar |