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IPAW70R600CEXKSA1

IPAW70R600CEXKSA1 Infineon Technologies


Infineon-IPAW70R600CE-DS-v02_00-EN.pdf?fileId=5546d462576f34750157d21612bd71fd Hersteller: Infineon Technologies
Description: MOSFET N-CH 700V 10.5A TO220-31
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.5A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 1A, 10V
Power Dissipation (Max): 86W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 210µA
Supplier Device Package: PG-TO220-3-FP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 474 pF @ 100 V
auf Bestellung 10825 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
443+1.14 EUR
Mindestbestellmenge: 443
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details IPAW70R600CEXKSA1 Infineon Technologies

Description: MOSFET N-CH 700V 10.5A TO220-31, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 10.5A (Tc), Rds On (Max) @ Id, Vgs: 600mOhm @ 1A, 10V, Power Dissipation (Max): 86W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 210µA, Supplier Device Package: PG-TO220-3-FP, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 700 V, Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 474 pF @ 100 V.

Weitere Produktangebote IPAW70R600CEXKSA1 nach Preis ab 1.87 EUR bis 3.26 EUR

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IPAW70R600CEXKSA1 IPAW70R600CEXKSA1 Hersteller : Infineon Technologies Infineon_IPAW70R600CE_DS_v02_00_EN-1731594.pdf MOSFET CONSUMER
auf Bestellung 876 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+3.26 EUR
10+2.92 EUR
100+2.27 EUR
450+1.87 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IPAW70R600CEXKSA1 IPAW70R600CEXKSA1 Hersteller : Infineon Technologies Infineon-IPAW70R600CE-DS-v02_00-EN.pdf?fileId=5546d462576f34750157d21612bd71fd Description: MOSFET N-CH 700V 10.5A TO220-31
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.5A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 1A, 10V
Power Dissipation (Max): 86W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 210µA
Supplier Device Package: PG-TO220-3-FP
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 474 pF @ 100 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH