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IPB011N04LGATMA1

IPB011N04LGATMA1 Infineon Technologies

IPB011N04L_rev1.0.pdf?folderId=db3a3043156fd5730115c7d50620107c&fileId=db3a30431689f4420116c451f4e20825
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 180A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 100A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 2V @ 200µA
Supplier Device Package: PG-TO263-7-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 346 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 29000 pF @ 20 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
1000+2.57 EUR
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details IPB011N04LGATMA1 Infineon Technologies

Description: MOSFET N-CH 40V 180A TO263-7, Packaging: Tape & Reel (TR), Package / Case: TO-263-7, D2PAK (6 Leads + Tab), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 180A (Tc), Rds On (Max) @ Id, Vgs: 1.1mOhm @ 100A, 10V, Power Dissipation (Max): 250W (Tc), Vgs(th) (Max) @ Id: 2V @ 200µA, Supplier Device Package: PG-TO263-7-3, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 346 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 29000 pF @ 20 V.

Weitere Produktangebote IPB011N04LGATMA1 nach Preis ab 2.25 EUR bis 7.32 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Preis
IPB011N04LGATMA1 IPB011N04LGATMA1 Infineon Technologies Infineon_IPB011N04L_DS_v01_03_en.pdf MOSFETs N-Ch 40V 180A D2PAK-6 OptiMOS 3
auf Bestellung 1858 Stücke:
Lieferzeit 10-14 Tag (e)
1+5.28 EUR
10+3.64 EUR
100+2.69 EUR
500+2.36 EUR
1000+2.25 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IPB011N04LGATMA1 IPB011N04LGATMA1 Infineon Technologies IPB011N04L_rev1.0.pdf?folderId=db3a3043156fd5730115c7d50620107c&fileId=db3a30431689f4420116c451f4e20825 Description: MOSFET N-CH 40V 180A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 100A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 2V @ 200µA
Supplier Device Package: PG-TO263-7-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 346 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 29000 pF @ 20 V
auf Bestellung 1991 Stücke:
Lieferzeit 10-14 Tag (e)
3+7.32 EUR
10+4.81 EUR
100+3.38 EUR
500+2.76 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IPB011N04LGATMA1 Infineon_IPB011N04L_DS_v01_03_en.pdf
IPB011N04LGATMA1
Hersteller: Infineon Technologies
MOSFETs N-Ch 40V 180A D2PAK-6 OptiMOS 3
auf Bestellung 1858 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
1+5.28 EUR
10+3.64 EUR
100+2.69 EUR
500+2.36 EUR
1000+2.25 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IPB011N04LGATMA1 IPB011N04L_rev1.0.pdf?folderId=db3a3043156fd5730115c7d50620107c&fileId=db3a30431689f4420116c451f4e20825
IPB011N04LGATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 180A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 100A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 2V @ 200µA
Supplier Device Package: PG-TO263-7-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 346 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 29000 pF @ 20 V
auf Bestellung 1991 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3+7.32 EUR
10+4.81 EUR
100+3.38 EUR
500+2.76 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH