IPB013N06NF2SATMA1 Infineon Technologies
Hersteller: Infineon Technologies
Description: TRENCH 40<-<100V
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta), 198A (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 100A, 10V
Power Dissipation (Max): 3.8W (Ta), 300W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 246µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 305 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13800 pF @ 30 V
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Technische Details IPB013N06NF2SATMA1 Infineon Technologies
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; SiC; unipolar; 60V; 198A; 300W; D2PAK,TO263, Case: D2PAK; TO263, Kind of channel: enhancement, Type of transistor: N-MOSFET, Technology: SiC, Mounting: SMD, Polarisation: unipolar, Gate charge: 203nC, On-state resistance: 1.3mΩ, Drain-source voltage: 60V, Drain current: 198A, Power dissipation: 300W.
Weitere Produktangebote IPB013N06NF2SATMA1 nach Preis ab 3.33 EUR bis 8.75 EUR
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IPB013N06NF2SATMA1 | Infineon Technologies |
MOSFETs IFX FET 60V |
auf Bestellung 834 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPB013N06NF2SATMA1 |
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Hersteller: Infineon Technologies
MOSFETs IFX FET 60V
MOSFETs IFX FET 60V
auf Bestellung 834 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 8.75 EUR |
| 10+ | 5.74 EUR |
| 100+ | 4.22 EUR |
| 500+ | 3.75 EUR |
| 800+ | 3.33 EUR |