IPB014N04NF2SATMA1 Infineon Technologies
Hersteller: Infineon Technologies
Description: TRENCH <= 40V
Input Capacitance (Ciss) (Max) @ Vds: 7500 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 159 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: PG-TO263-3
Vgs(th) (Max) @ Id: 3.4V @ 126µA
Power Dissipation (Max): 3.8W (Ta), 188W (Tc)
Rds On (Max) @ Id, Vgs: 1.45mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 38A (Ta), 191A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
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Technische Details IPB014N04NF2SATMA1 Infineon Technologies
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; SiC; unipolar; 40V; 188W; D2PAK,TO263, Gate charge: 159nC, On-state resistance: 1.03mΩ, Power dissipation: 188W, Drain-source voltage: 40V, Case: D2PAK; TO263, Kind of channel: enhancement, Type of transistor: N-MOSFET, Technology: SiC, Mounting: SMD, Polarisation: unipolar.
Weitere Produktangebote IPB014N04NF2SATMA1
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
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IPB014N04NF2SATMA1 | Infineon Technologies |
Description: TRENCH <= 40V Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) Vgs(th) (Max) @ Id: 3.4V @ 126µA Power Dissipation (Max): 3.8W (Ta), 188W (Tc) Rds On (Max) @ Id, Vgs: 1.45mOhm @ 100A, 10V Current - Continuous Drain (Id) @ 25°C: 38A (Ta), 191A (Tc) FET Type: N-Channel Input Capacitance (Ciss) (Max) @ Vds: 7500 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 159 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Part Status: Active Supplier Device Package: PG-TO263-3 Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH |
 |
IPB014N04NF2SATMA1 | Infineon Technologies |
MOSFETs IFX FET 40V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| IPB014N04NF2SATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 40V; 188W; D2PAK,TO263 Gate charge: 159nC On-state resistance: 1.03mΩ Power dissipation: 188W Drain-source voltage: 40V Case: D2PAK; TO263 Kind of channel: enhancement Type of transistor: N-MOSFET Technology: SiC Mounting: SMD Polarisation: unipolar |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH |
| IPB014N04NF2SATMA1 |
|
Hersteller: Infineon Technologies
Description: TRENCH <= 40V
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Vgs(th) (Max) @ Id: 3.4V @ 126µA
Power Dissipation (Max): 3.8W (Ta), 188W (Tc)
Rds On (Max) @ Id, Vgs: 1.45mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 38A (Ta), 191A (Tc)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 7500 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 159 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: PG-TO263-3
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Description: TRENCH <= 40V
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Vgs(th) (Max) @ Id: 3.4V @ 126µA
Power Dissipation (Max): 3.8W (Ta), 188W (Tc)
Rds On (Max) @ Id, Vgs: 1.45mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 38A (Ta), 191A (Tc)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 7500 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 159 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: PG-TO263-3
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IPB014N04NF2SATMA1 |
|
Hersteller: Infineon Technologies
MOSFETs IFX FET 40V
MOSFETs IFX FET 40V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IPB014N04NF2SATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 40V; 188W; D2PAK,TO263
Gate charge: 159nC
On-state resistance: 1.03mΩ
Power dissipation: 188W
Drain-source voltage: 40V
Case: D2PAK; TO263
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: SiC
Mounting: SMD
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 40V; 188W; D2PAK,TO263
Gate charge: 159nC
On-state resistance: 1.03mΩ
Power dissipation: 188W
Drain-source voltage: 40V
Case: D2PAK; TO263
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: SiC
Mounting: SMD
Polarisation: unipolar
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
Im Einkaufswagen
Stück im Wert von UAH