Produkte > INFINEON TECHNOLOGIES > IPB017N08N5ATMA1

IPB017N08N5ATMA1 INFINEON TECHNOLOGIES


IPB017N08N5-DTE.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 120A; 375W; PG-TO263-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 120A
Power dissipation: 375W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 1.7mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 5
auf Bestellung 788 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
11+6.81 EUR
18+3.98 EUR
20+3.63 EUR
25+3.33 EUR
50+3.17 EUR
100+3.06 EUR
Mindestbestellmenge: 11 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details IPB017N08N5ATMA1 INFINEON TECHNOLOGIES

Description: MOSFET N-CH 80V 120A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), Rds On (Max) @ Id, Vgs: 1.7mOhm @ 100A, 10V, Power Dissipation (Max): 375W (Tc), Vgs(th) (Max) @ Id: 3.8V @ 280µA, Supplier Device Package: PG-TO263-3, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 223 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 16900 pF @ 40 V.

Weitere Produktangebote IPB017N08N5ATMA1 nach Preis ab 4.73 EUR bis 10.91 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Preis
IPB017N08N5ATMA1 IPB017N08N5ATMA1 Infineon Technologies Infineon-IPB017N08N5-DS-v02_01-en.pdf?fileId=5546d461454603990145ccd9e5e0620c Description: MOSFET N-CH 80V 120A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 16900 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 223 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: PG-TO263-3
Vgs(th) (Max) @ Id: 3.8V @ 280µA
Power Dissipation (Max): 375W (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
auf Bestellung 550 Stücke:
Lieferzeit 10-14 Tag (e)
2+10.24 EUR
10+6.91 EUR
100+5.08 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IPB017N08N5ATMA1 IPB017N08N5ATMA1 Infineon Technologies Infineon-IPB017N08N5-DS-v02_02-EN.pdf MOSFETs N-Ch 80V 120A D2PAK-2
auf Bestellung 1896 Stücke:
Lieferzeit 10-14 Tag (e)
1+10.91 EUR
10+7.37 EUR
100+5.35 EUR
500+5.07 EUR
1000+4.73 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IPB017N08N5ATMA1 Infineon-IPB017N08N5-DS-v02_01-en.pdf?fileId=5546d461454603990145ccd9e5e0620c
Hersteller: Infineon Technologies
Description: MOSFET N-CH 80V 120A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 16900 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 223 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: PG-TO263-3
Vgs(th) (Max) @ Id: 3.8V @ 280µA
Power Dissipation (Max): 375W (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
auf Bestellung 550 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
2+10.24 EUR
10+6.91 EUR
100+5.08 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IPB017N08N5ATMA1 Infineon-IPB017N08N5-DS-v02_02-EN.pdf
Hersteller: Infineon Technologies
MOSFETs N-Ch 80V 120A D2PAK-2
auf Bestellung 1896 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
1+10.91 EUR
10+7.37 EUR
100+5.35 EUR
500+5.07 EUR
1000+4.73 EUR
Im Einkaufswagen  Stück im Wert von  UAH