
IPB019N06L3GATMA1 Infineon Technologies

Description: MOSFET N-CH 60V 120A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 100A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 196µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 166 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 28000 pF @ 30 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
---|---|
1000+ | 2.85 EUR |
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Technische Details IPB019N06L3GATMA1 Infineon Technologies
Description: MOSFET N-CH 60V 120A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), Rds On (Max) @ Id, Vgs: 1.9mOhm @ 100A, 10V, Power Dissipation (Max): 250W (Tc), Vgs(th) (Max) @ Id: 2.2V @ 196µA, Supplier Device Package: PG-TO263-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 166 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 28000 pF @ 30 V.
Weitere Produktangebote IPB019N06L3GATMA1 nach Preis ab 2.04 EUR bis 7.71 EUR
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IPB019N06L3GATMA1 | Hersteller : INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 120A; 250W; PG-TO263-3 Mounting: SMD Technology: OptiMOS™ 3 Kind of channel: enhancement Gate-source voltage: ±20V Case: PG-TO263-3 Drain-source voltage: 60V Drain current: 120A On-state resistance: 1.9mΩ Type of transistor: N-MOSFET Power dissipation: 250W Polarisation: unipolar Anzahl je Verpackung: 1 Stücke |
auf Bestellung 991 Stücke: Lieferzeit 7-14 Tag (e) |
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IPB019N06L3GATMA1 | Hersteller : INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 120A; 250W; PG-TO263-3 Mounting: SMD Technology: OptiMOS™ 3 Kind of channel: enhancement Gate-source voltage: ±20V Case: PG-TO263-3 Drain-source voltage: 60V Drain current: 120A On-state resistance: 1.9mΩ Type of transistor: N-MOSFET Power dissipation: 250W Polarisation: unipolar |
auf Bestellung 991 Stücke: Lieferzeit 14-21 Tag (e) |
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IPB019N06L3GATMA1 | Hersteller : Infineon Technologies |
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auf Bestellung 4934 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB019N06L3GATMA1 | Hersteller : Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 1.9mOhm @ 100A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 196µA Supplier Device Package: PG-TO263-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 166 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 28000 pF @ 30 V |
auf Bestellung 7156 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB019N06L3GATMA1 | Hersteller : Infineon Technologies |
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auf Bestellung 2000 Stücke: Lieferzeit 14-21 Tag (e) |
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IPB019N06L3GATMA1 | Hersteller : Infineon Technologies |
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Produkt ist nicht verfügbar |
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IPB019N06L3GATMA1 | Hersteller : Infineon Technologies |
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Produkt ist nicht verfügbar |