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IPB019N06L3GATMA1

IPB019N06L3GATMA1 Infineon Technologies

IPB019N06L3_Rev2.0.pdf?folderId=db3a30431441fb5d01148ca9f1be0e77&fileId=db3a30431ddc9372011e2600a49e467b Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 120A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 100A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 196µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 166 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 28000 pF @ 30 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1000+2.85 EUR
Mindestbestellmenge: 1000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details IPB019N06L3GATMA1 Infineon Technologies

Description: MOSFET N-CH 60V 120A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), Rds On (Max) @ Id, Vgs: 1.9mOhm @ 100A, 10V, Power Dissipation (Max): 250W (Tc), Vgs(th) (Max) @ Id: 2.2V @ 196µA, Supplier Device Package: PG-TO263-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 166 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 28000 pF @ 30 V.

Weitere Produktangebote IPB019N06L3GATMA1 nach Preis ab 2.04 EUR bis 7.71 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
IPB019N06L3GATMA1 IPB019N06L3GATMA1 Hersteller : INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A0F5D2357E44611C&compId=IPB019N06L3G-DTE.pdf?ci_sign=4b0168ba4c06a8a1305f4cb61675e11cd42afead Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 120A; 250W; PG-TO263-3
Mounting: SMD
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
Case: PG-TO263-3
Drain-source voltage: 60V
Drain current: 120A
On-state resistance: 1.9mΩ
Type of transistor: N-MOSFET
Power dissipation: 250W
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
auf Bestellung 991 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
20+3.60 EUR
32+2.25 EUR
34+2.12 EUR
200+2.04 EUR
Mindestbestellmenge: 20
Im Einkaufswagen  Stück im Wert von  UAH
IPB019N06L3GATMA1 IPB019N06L3GATMA1 Hersteller : INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A0F5D2357E44611C&compId=IPB019N06L3G-DTE.pdf?ci_sign=4b0168ba4c06a8a1305f4cb61675e11cd42afead Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 120A; 250W; PG-TO263-3
Mounting: SMD
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
Case: PG-TO263-3
Drain-source voltage: 60V
Drain current: 120A
On-state resistance: 1.9mΩ
Type of transistor: N-MOSFET
Power dissipation: 250W
Polarisation: unipolar
auf Bestellung 991 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
20+3.60 EUR
32+2.25 EUR
34+2.12 EUR
200+2.04 EUR
Mindestbestellmenge: 20
Im Einkaufswagen  Stück im Wert von  UAH
IPB019N06L3GATMA1 IPB019N06L3GATMA1 Hersteller : Infineon Technologies Infineon_IPB019N06L3_DS_v02_02_en-1731620.pdf MOSFETs N-Ch 60V 120A D2PAK-2 OptiMOS 3
auf Bestellung 4934 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+6.04 EUR
10+4.47 EUR
25+4.45 EUR
100+3.27 EUR
500+2.92 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IPB019N06L3GATMA1 IPB019N06L3GATMA1 Hersteller : Infineon Technologies IPB019N06L3_Rev2.0.pdf?folderId=db3a30431441fb5d01148ca9f1be0e77&fileId=db3a30431ddc9372011e2600a49e467b Description: MOSFET N-CH 60V 120A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 100A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 196µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 166 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 28000 pF @ 30 V
auf Bestellung 7156 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.71 EUR
10+5.11 EUR
100+3.63 EUR
500+3.00 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
IPB019N06L3GATMA1 IPB019N06L3GATMA1 Hersteller : Infineon Technologies ipb019n06l3_rev2.0.pdf Trans MOSFET N-CH 60V 120A 3-Pin(2+Tab) D2PAK T/R
auf Bestellung 2000 Stücke:
Lieferzeit 14-21 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
IPB019N06L3GATMA1 IPB019N06L3GATMA1 Hersteller : Infineon Technologies ipb019n06l3_rev2.0.pdf Trans MOSFET N-CH 60V 120A 3-Pin(2+Tab) D2PAK T/R
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPB019N06L3GATMA1 IPB019N06L3GATMA1 Hersteller : Infineon Technologies ipb019n06l3_rev2.0.pdf Trans MOSFET N-CH 60V 120A 3-Pin(2+Tab) D2PAK T/R
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH