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IPB019N06L3GATMA1

IPB019N06L3GATMA1 Infineon Technologies

IPB019N06L3_Rev2.0.pdf?folderId=db3a30431441fb5d01148ca9f1be0e77&fileId=db3a30431ddc9372011e2600a49e467b
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 120A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 100A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 196µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 166 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 28000 pF @ 30 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1000+3.39 EUR
Mindestbestellmenge: 1000 Stücke
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Technische Details IPB019N06L3GATMA1 Infineon Technologies

Description: MOSFET N-CH 60V 120A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), Rds On (Max) @ Id, Vgs: 1.9mOhm @ 100A, 10V, Power Dissipation (Max): 250W (Tc), Vgs(th) (Max) @ Id: 2.2V @ 196µA, Supplier Device Package: PG-TO263-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 166 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 28000 pF @ 30 V.

Weitere Produktangebote IPB019N06L3GATMA1 nach Preis ab 3.17 EUR bis 9.82 EUR

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IPB019N06L3GATMA1 IPB019N06L3GATMA1 Infineon Technologies IPB019N06L3_Rev2.0.pdf?folderId=db3a30431441fb5d01148ca9f1be0e77&fileId=db3a30431ddc9372011e2600a49e467b Description: MOSFET N-CH 60V 120A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 100A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 196µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 166 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 28000 pF @ 30 V
auf Bestellung 7156 Stücke:
Lieferzeit 10-14 Tag (e)
3+9.17 EUR
10+6.08 EUR
100+4.32 EUR
500+3.57 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IPB019N06L3GATMA1 IPB019N06L3GATMA1 Infineon Technologies infineon_ipb019n06l3_ds_en.pdf MOSFETs N-Ch 60V 120A D2PAK-2 OptiMOS 3
auf Bestellung 2342 Stücke:
Lieferzeit 10-14 Tag (e)
1+9.82 EUR
10+6.43 EUR
100+4.8 EUR
500+4.02 EUR
1000+3.72 EUR
2000+3.47 EUR
5000+3.17 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IPB019N06L3GATMA1 IPB019N06L3GATMA1 INFINEON TECHNOLOGIES IPB019N06L3G-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 120A; 250W; PG-TO263-3
Mounting: SMD
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: PG-TO263-3
On-state resistance: 1.9mΩ
Power dissipation: 250W
Polarisation: unipolar
Technology: OptiMOS™ 3
Drain current: 120A
Kind of channel: enhancement
auf Bestellung 622 Stücke:
Lieferzeit 14-21 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
IPB019N06L3GATMA1 IPB019N06L3_Rev2.0.pdf?folderId=db3a30431441fb5d01148ca9f1be0e77&fileId=db3a30431ddc9372011e2600a49e467b
IPB019N06L3GATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 120A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 100A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 196µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 166 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 28000 pF @ 30 V
auf Bestellung 7156 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+9.17 EUR
10+6.08 EUR
100+4.32 EUR
500+3.57 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IPB019N06L3GATMA1 infineon_ipb019n06l3_ds_en.pdf
IPB019N06L3GATMA1
Hersteller: Infineon Technologies
MOSFETs N-Ch 60V 120A D2PAK-2 OptiMOS 3
auf Bestellung 2342 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+9.82 EUR
10+6.43 EUR
100+4.8 EUR
500+4.02 EUR
1000+3.72 EUR
2000+3.47 EUR
5000+3.17 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IPB019N06L3GATMA1 IPB019N06L3G-DTE.pdf
IPB019N06L3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 120A; 250W; PG-TO263-3
Mounting: SMD
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: PG-TO263-3
On-state resistance: 1.9mΩ
Power dissipation: 250W
Polarisation: unipolar
Technology: OptiMOS™ 3
Drain current: 120A
Kind of channel: enhancement
auf Bestellung 622 Stücke:
Lieferzeit 14-21 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH