IPB020N10N5LF INFINEON TECHNOLOGIES
Hersteller: INFINEON TECHNOLOGIESCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; 313W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Power dissipation: 313W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 1000 Stücke
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Technische Details IPB020N10N5LF INFINEON TECHNOLOGIES
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 100V; 120A; 313W; PG-TO263-3, Type of transistor: N-MOSFET, Technology: OptiMOS™ 5, Polarisation: unipolar, Drain-source voltage: 100V, Drain current: 120A, Power dissipation: 313W, Case: PG-TO263-3, Gate-source voltage: ±20V, On-state resistance: 2mΩ, Mounting: SMD, Kind of channel: enhanced, Anzahl je Verpackung: 1000 Stücke.
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IPB020N10N5LF | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 120A; 313W; PG-TO263-3 Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 100V Drain current: 120A Power dissipation: 313W Case: PG-TO263-3 Gate-source voltage: ±20V On-state resistance: 2mΩ Mounting: SMD Kind of channel: enhanced |
Produkt ist nicht verfügbar |