IPB021N10NM5LF2ATMA1 Infineon Technologies
Hersteller: Infineon TechnologiesDescription: IPB021N10NM5LF2ATMA1
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 176A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 100A, 15V
Power Dissipation (Max): 3.8W (Ta), 375W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 280µA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 206 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 17000 pF @ 50 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1000+ | 3.37 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details IPB021N10NM5LF2ATMA1 Infineon Technologies
Description: IPB021N10NM5LF2ATMA1, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 176A (Tc), Rds On (Max) @ Id, Vgs: 2mOhm @ 100A, 15V, Power Dissipation (Max): 3.8W (Ta), 375W (Tc), Vgs(th) (Max) @ Id: 3.9V @ 280µA, Supplier Device Package: PG-TO263-3-2, Drive Voltage (Max Rds On, Min Rds On): 10V, 15V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 206 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 17000 pF @ 50 V.
Weitere Produktangebote IPB021N10NM5LF2ATMA1 nach Preis ab 3.7 EUR bis 8.75 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
IPB021N10NM5LF2ATMA1 | Hersteller : Infineon Technologies |
MOSFETs OptiMOS 5 Linear FET 2, 100 V |
auf Bestellung 19 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
|
|
IPB021N10NM5LF2ATMA1 | Hersteller : Infineon Technologies |
Description: IPB021N10NM5LF2ATMA1 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 176A (Tc) Rds On (Max) @ Id, Vgs: 2mOhm @ 100A, 15V Power Dissipation (Max): 3.8W (Ta), 375W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 280µA Supplier Device Package: PG-TO263-3-2 Drive Voltage (Max Rds On, Min Rds On): 10V, 15V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 206 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 17000 pF @ 50 V |
auf Bestellung 1017 Stücke: Lieferzeit 10-14 Tag (e) |
|