IPB021N10NM5LF2ATMA1 Infineon Technologies
auf Bestellung 985 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 8.17 EUR |
| 10+ | 6.65 EUR |
| 100+ | 5.39 EUR |
| 500+ | 4.79 EUR |
| 1000+ | 4.10 EUR |
| 2000+ | 3.85 EUR |
| 5000+ | 3.84 EUR |
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Technische Details IPB021N10NM5LF2ATMA1 Infineon Technologies
Description: IPB021N10NM5LF2ATMA1, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 176A (Tc), Rds On (Max) @ Id, Vgs: 2mOhm @ 100A, 15V, Power Dissipation (Max): 3.8W (Ta), 375W (Tc), Vgs(th) (Max) @ Id: 3.9V @ 280µA, Supplier Device Package: PG-TO263-3-2, Drive Voltage (Max Rds On, Min Rds On): 10V, 15V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 206 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 17000 pF @ 50 V.
Weitere Produktangebote IPB021N10NM5LF2ATMA1 nach Preis ab 4.19 EUR bis 8.91 EUR
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IPB021N10NM5LF2ATMA1 | Hersteller : Infineon Technologies |
 Description: IPB021N10NM5LF2ATMA1Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 176A (Tc) Rds On (Max) @ Id, Vgs: 2mOhm @ 100A, 15V Power Dissipation (Max): 3.8W (Ta), 375W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 280µA Supplier Device Package: PG-TO263-3-2 Drive Voltage (Max Rds On, Min Rds On): 10V, 15V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 206 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 17000 pF @ 50 V |
auf Bestellung 987 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB021N10NM5LF2ATMA1 | Hersteller : Infineon Technologies |
Description: IPB021N10NM5LF2ATMA1 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 176A (Tc) Rds On (Max) @ Id, Vgs: 2mOhm @ 100A, 15V Power Dissipation (Max): 3.8W (Ta), 375W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 280µA Supplier Device Package: PG-TO263-3-2 Drive Voltage (Max Rds On, Min Rds On): 10V, 15V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 206 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 17000 pF @ 50 V |
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