auf Bestellung 416 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 10.58 EUR |
| 10+ | 7.57 EUR |
| 25+ | 7.55 EUR |
| 100+ | 5.56 EUR |
| 500+ | 5.14 EUR |
| 1000+ | 4.86 EUR |
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Technische Details IPB022N12NM6ATMA1 Infineon Technologies
Description: TRENCH >=100V, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 167A (Tc), Rds On (Max) @ Id, Vgs: 2.2mOhm @ 100A, 10V, Power Dissipation (Max): 3.8W (Ta), 395W (Tc), Vgs(th) (Max) @ Id: 3.6V @ 275µA, Supplier Device Package: PG-TO263-3-2, Drive Voltage (Max Rds On, Min Rds On): 8V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 120 V, Gate Charge (Qg) (Max) @ Vgs: 141 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 60 V.
Weitere Produktangebote IPB022N12NM6ATMA1 nach Preis ab 5.64 EUR bis 12.81 EUR
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IPB022N12NM6ATMA1 | Hersteller : Infineon Technologies |
 Description: TRENCH >=100VPackaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 167A (Tc) Rds On (Max) @ Id, Vgs: 2.2mOhm @ 100A, 10V Power Dissipation (Max): 3.8W (Ta), 395W (Tc) Vgs(th) (Max) @ Id: 3.6V @ 275µA Supplier Device Package: PG-TO263-3-2 Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 120 V Gate Charge (Qg) (Max) @ Vgs: 141 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 60 V |
auf Bestellung 945 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPB022N12NM6ATMA1 | Hersteller : Infineon Technologies |
TRENCH >=100V |
Produkt ist nicht verfügbar |
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IPB022N12NM6ATMA1 | Hersteller : Infineon Technologies |
Description: TRENCH >=100V Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 167A (Tc) Rds On (Max) @ Id, Vgs: 2.2mOhm @ 100A, 10V Power Dissipation (Max): 3.8W (Ta), 395W (Tc) Vgs(th) (Max) @ Id: 3.6V @ 275µA Supplier Device Package: PG-TO263-3-2 Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 120 V Gate Charge (Qg) (Max) @ Vgs: 141 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 60 V |
Produkt ist nicht verfügbar |