| Anzahl | Preis |
|---|---|
| 1+ | 10.58 EUR |
| 10+ | 7.57 EUR |
| 25+ | 7.55 EUR |
| 100+ | 5.56 EUR |
| 500+ | 5.14 EUR |
| 1000+ | 4.86 EUR |
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Technische Details IPB022N12NM6ATMA1 Infineon Technologies
Description: TRENCH >=100V, Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 60 V, Gate Charge (Qg) (Max) @ Vgs: 141 nC @ 10 V, Drain to Source Voltage (Vdss): 120 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 8V, 10V, Supplier Device Package: PG-TO263-3-2, Vgs(th) (Max) @ Id: 3.6V @ 275µA, Power Dissipation (Max): 3.8W (Ta), 395W (Tc), Rds On (Max) @ Id, Vgs: 2.2mOhm @ 100A, 10V, Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 167A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tape & Reel (TR).
Weitere Produktangebote IPB022N12NM6ATMA1 nach Preis ab 5.64 EUR bis 12.81 EUR
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IPB022N12NM6ATMA1 | Infineon Technologies |
 Description: TRENCH >=100VInput Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 60 V Gate Charge (Qg) (Max) @ Vgs: 141 nC @ 10 V Drain to Source Voltage (Vdss): 120 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Supplier Device Package: PG-TO263-3-2 Vgs(th) (Max) @ Id: 3.6V @ 275µA Power Dissipation (Max): 3.8W (Ta), 395W (Tc) Rds On (Max) @ Id, Vgs: 2.2mOhm @ 100A, 10V Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 167A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Cut Tape (CT) |
auf Bestellung 945 Stücke: Lieferzeit 10-14 Tag (e) |
|
| IPB022N12NM6ATMA1 |
|
Hersteller: Infineon Technologies
Description: TRENCH >=100V
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 60 V
Gate Charge (Qg) (Max) @ Vgs: 141 nC @ 10 V
Drain to Source Voltage (Vdss): 120 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Supplier Device Package: PG-TO263-3-2
Vgs(th) (Max) @ Id: 3.6V @ 275µA
Power Dissipation (Max): 3.8W (Ta), 395W (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 167A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Description: TRENCH >=100V
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 60 V
Gate Charge (Qg) (Max) @ Vgs: 141 nC @ 10 V
Drain to Source Voltage (Vdss): 120 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Supplier Device Package: PG-TO263-3-2
Vgs(th) (Max) @ Id: 3.6V @ 275µA
Power Dissipation (Max): 3.8W (Ta), 395W (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 167A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
auf Bestellung 945 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 12.81 EUR |
| 10+ | 8.71 EUR |
| 100+ | 6.38 EUR |
| 500+ | 5.64 EUR |