IPB024N08N5ATMA1 Infineon Technologies
| Anzahl | Preis |
|---|---|
| 1+ | 6.2 EUR |
| 10+ | 5.21 EUR |
| 25+ | 4.91 EUR |
| 100+ | 4.21 EUR |
| 250+ | 3.98 EUR |
| 500+ | 3.73 EUR |
| 1000+ | 3.19 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details IPB024N08N5ATMA1 Infineon Technologies
Description: MOSFET N-CH 80V 120A D2PAK, Input Capacitance (Ciss) (Max) @ Vds: 8970 pF @ 40 V, Gate Charge (Qg) (Max) @ Vgs: 123 nC @ 10 V, Drain to Source Voltage (Vdss): 80 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Part Status: Active, Supplier Device Package: PG-TO263-3, Vgs(th) (Max) @ Id: 3.8V @ 154µA, Power Dissipation (Max): 214W (Tc), Rds On (Max) @ Id, Vgs: 2.4mOhm @ 100A, 10V, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tape & Reel (TR).
Weitere Produktangebote IPB024N08N5ATMA1 nach Preis ab 3.2 EUR bis 7.25 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
IPB024N08N5ATMA1 | Infineon Technologies |
 Description: MOSFET N-CH 80V 120A D2PAKInput Capacitance (Ciss) (Max) @ Vds: 8970 pF @ 40 V Gate Charge (Qg) (Max) @ Vgs: 123 nC @ 10 V Drain to Source Voltage (Vdss): 80 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Part Status: Active Supplier Device Package: PG-TO263-3 Vgs(th) (Max) @ Id: 3.8V @ 154µA Power Dissipation (Max): 214W (Tc) Rds On (Max) @ Id, Vgs: 2.4mOhm @ 100A, 10V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Cut Tape (CT) |
auf Bestellung 990 Stücke: Lieferzeit 10-14 Tag (e) |
|
| IPB024N08N5ATMA1 |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 80V 120A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 8970 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 123 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: PG-TO263-3
Vgs(th) (Max) @ Id: 3.8V @ 154µA
Power Dissipation (Max): 214W (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 80V 120A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 8970 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 123 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: PG-TO263-3
Vgs(th) (Max) @ Id: 3.8V @ 154µA
Power Dissipation (Max): 214W (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
auf Bestellung 990 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 7.25 EUR |
| 10+ | 4.8 EUR |
| 100+ | 3.41 EUR |
| 500+ | 3.2 EUR |