IPB025N08N3 G Infineon Technologies

Description: N-CHANNEL POWER MOSFET, Rds On (Max) @ Id, Vgs: 2.5mOhm @ 100A, 10V, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Packaging: Bulk, Input Capacitance (Ciss) (Max) @ Vds: 14200 pF @ 40 V, Gate Charge (Qg) (Max) @ Vgs: 206 nC @ 10 V, Drain to Source Voltage (Vdss): 80 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Part Status: Active, Supplier Device Package: PG-TO263-3-2, Vgs(th) (Max) @ Id: 3.5V @ 270µA, Power Dissipation (Max): 300W (Tc).