IPB027N10N3G UMW
Hersteller: UMW
Description: MOSFET N-CH 100V 120A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A
Power Dissipation (Max): 300W
Supplier Device Package: TO-263-3
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
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Technische Details IPB027N10N3G UMW
Description: MOSFET N-CH 100V 120A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 120A, Power Dissipation (Max): 300W, Supplier Device Package: TO-263-3, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V.
Weitere Produktangebote IPB027N10N3G nach Preis ab 2 EUR bis 12.42 EUR
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IPB027N10N3G | UMW |
Description: MOSFET N-CH 100V 120A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A Power Dissipation (Max): 300W Supplier Device Package: TO-263-3 Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V |
auf Bestellung 216 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB027N10N3 G | Infineon Technologies |
Trans MOSFET N-CH 100V 120A 3-Pin(2+Tab) D2PAK T/R |
auf Bestellung 2000 Stücke: Lieferzeit 14-21 Tag (e) |
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IPB027N10N3 G | Infineon Technologies |
MOSFETs N-Ch 100V 120A D2PAK-2 OptiMOS 3 |
auf Bestellung 4677 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPB027N10N3 G | Infineon |
auf Bestellung 300 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| IPB027N10N3G |
|
Hersteller: UMW
Description: MOSFET N-CH 100V 120A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A
Power Dissipation (Max): 300W
Supplier Device Package: TO-263-3
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Description: MOSFET N-CH 100V 120A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A
Power Dissipation (Max): 300W
Supplier Device Package: TO-263-3
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
auf Bestellung 216 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 4.58 EUR |
| 10+ | 2.94 EUR |
| 50+ | 2.23 EUR |
| 100+ | 2 EUR |
| IPB027N10N3 G |
|
Hersteller: Infineon Technologies
Trans MOSFET N-CH 100V 120A 3-Pin(2+Tab) D2PAK T/R
Trans MOSFET N-CH 100V 120A 3-Pin(2+Tab) D2PAK T/R
auf Bestellung 2000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 19+ | 9.45 EUR |
| 25+ | 8.91 EUR |
| 50+ | 8.38 EUR |
| 100+ | 7.91 EUR |
| 250+ | 7.57 EUR |
| 500+ | 7.25 EUR |
| 1000+ | 6.9 EUR |
| IPB027N10N3 G |
|
Hersteller: Infineon Technologies
MOSFETs N-Ch 100V 120A D2PAK-2 OptiMOS 3
MOSFETs N-Ch 100V 120A D2PAK-2 OptiMOS 3
auf Bestellung 4677 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 12.42 EUR |
| 10+ | 8.15 EUR |
| 100+ | 5.99 EUR |
| 500+ | 5.34 EUR |
| 1000+ | 4.69 EUR |
| 2000+ | 4.46 EUR |
| 5000+ | 4.27 EUR |
| IPB027N10N3 G |
Hersteller: Infineon
auf Bestellung 300 Stücke:
Lieferzeit 21-28 Tag (e)