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IPB029N06N3GATMA1

IPB029N06N3GATMA1 Infineon Technologies

IPP032N06N3_Rev2.0.pdf?folderId=db3a30431441fb5d01148ca9f1be0e77&fileId=db3a30431ddc9372011e2a84ff084cc8 Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 120A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 100A, 10V
Power Dissipation (Max): 188W (Tc)
Vgs(th) (Max) @ Id: 4V @ 118µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 30 V
auf Bestellung 24000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1000+1.43 EUR
2000+1.35 EUR
Mindestbestellmenge: 1000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details IPB029N06N3GATMA1 Infineon Technologies

Description: MOSFET N-CH 60V 120A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), Rds On (Max) @ Id, Vgs: 2.9mOhm @ 100A, 10V, Power Dissipation (Max): 188W (Tc), Vgs(th) (Max) @ Id: 4V @ 118µA, Supplier Device Package: PG-TO263-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 30 V.

Weitere Produktangebote IPB029N06N3GATMA1 nach Preis ab 1.52 EUR bis 4.05 EUR

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IPB029N06N3GATMA1 IPB029N06N3GATMA1 Hersteller : Infineon Technologies IPP032N06N3_Rev2.0.pdf?folderId=db3a30431441fb5d01148ca9f1be0e77&fileId=db3a30431ddc9372011e2a84ff084cc8 Description: MOSFET N-CH 60V 120A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 100A, 10V
Power Dissipation (Max): 188W (Tc)
Vgs(th) (Max) @ Id: 4V @ 118µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 30 V
auf Bestellung 24609 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.78 EUR
10+2.65 EUR
100+1.86 EUR
500+1.66 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
IPB029N06N3GATMA1 IPB029N06N3GATMA1 Hersteller : Infineon Technologies Infineon_IPP032N06N3_DS_v02_02_en-3164921.pdf MOSFETs N-Ch 60V 120A D2PAK-2 OptiMOS 3
auf Bestellung 2284 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+4.05 EUR
10+2.87 EUR
100+2.02 EUR
500+1.76 EUR
1000+1.55 EUR
2000+1.52 EUR
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IPB029N06N3GATMA1 IPB029N06N3GATMA1 Hersteller : Infineon Technologies ipp032n06n3_rev2.0.pdf Trans MOSFET N-CH 60V 120A 3-Pin(2+Tab) D2PAK T/R
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
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IPB029N06N3GATMA1
Produktcode: 150736
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IPP032N06N3_Rev2.0.pdf?folderId=db3a30431441fb5d01148ca9f1be0e77&fileId=db3a30431ddc9372011e2a84ff084cc8 Transistoren > MOSFET N-CH
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IPB029N06N3GATMA1 Hersteller : INFINEON TECHNOLOGIES IPP032N06N3_Rev2.0.pdf?folderId=db3a30431441fb5d01148ca9f1be0e77&fileId=db3a30431ddc9372011e2a84ff084cc8 IPB029N06N3GATMA1 SMD N channel transistors
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