IPB029N06N3GATMA1 Infineon Technologies
Hersteller: Infineon TechnologiesDescription: MOSFET N-CH 60V 120A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 100A, 10V
Power Dissipation (Max): 188W (Tc)
Vgs(th) (Max) @ Id: 4V @ 118µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 30 V
auf Bestellung 24000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1000+ | 1.43 EUR |
| 2000+ | 1.35 EUR |
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Technische Details IPB029N06N3GATMA1 Infineon Technologies
Description: MOSFET N-CH 60V 120A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), Rds On (Max) @ Id, Vgs: 2.9mOhm @ 100A, 10V, Power Dissipation (Max): 188W (Tc), Vgs(th) (Max) @ Id: 4V @ 118µA, Supplier Device Package: PG-TO263-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 30 V.
Weitere Produktangebote IPB029N06N3GATMA1 nach Preis ab 1.52 EUR bis 4.05 EUR
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IPB029N06N3GATMA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 60V 120A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 2.9mOhm @ 100A, 10V Power Dissipation (Max): 188W (Tc) Vgs(th) (Max) @ Id: 4V @ 118µA Supplier Device Package: PG-TO263-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 30 V |
auf Bestellung 24609 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB029N06N3GATMA1 | Hersteller : Infineon Technologies |
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IPB029N06N3GATMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 60V 120A 3-Pin(2+Tab) D2PAK T/R |
auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
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IPB029N06N3GATMA1 Produktcode: 150736
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Transistoren > MOSFET N-CH |
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IPB029N06N3GATMA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 120A; 188W; PG-TO263-3 Type of transistor: N-MOSFET Case: PG-TO263-3 Drain-source voltage: 60V Drain current: 120A On-state resistance: 2.9mΩ Power dissipation: 188W Polarisation: unipolar Technology: OptiMOS™ 3 Kind of channel: enhancement Gate-source voltage: ±20V Mounting: SMD Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IPB029N06N3GATMA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 120A; 188W; PG-TO263-3 Type of transistor: N-MOSFET Case: PG-TO263-3 Drain-source voltage: 60V Drain current: 120A On-state resistance: 2.9mΩ Power dissipation: 188W Polarisation: unipolar Technology: OptiMOS™ 3 Kind of channel: enhancement Gate-source voltage: ±20V Mounting: SMD |
Produkt ist nicht verfügbar |