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IPB029N06N3GATMA1

IPB029N06N3GATMA1 Infineon Technologies

IPP032N06N3_Rev2.0.pdf?folderId=db3a30431441fb5d01148ca9f1be0e77&fileId=db3a30431ddc9372011e2a84ff084cc8 Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 120A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 100A, 10V
Power Dissipation (Max): 188W (Tc)
Vgs(th) (Max) @ Id: 4V @ 118µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 30 V
auf Bestellung 28000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1000+1.64 EUR
2000+ 1.56 EUR
5000+ 1.5 EUR
10000+ 1.45 EUR
Mindestbestellmenge: 1000
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Technische Details IPB029N06N3GATMA1 Infineon Technologies

Description: MOSFET N-CH 60V 120A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), Rds On (Max) @ Id, Vgs: 2.9mOhm @ 100A, 10V, Power Dissipation (Max): 188W (Tc), Vgs(th) (Max) @ Id: 4V @ 118µA, Supplier Device Package: PG-TO263-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 30 V.

Weitere Produktangebote IPB029N06N3GATMA1 nach Preis ab 1.57 EUR bis 3.48 EUR

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IPB029N06N3GATMA1 IPB029N06N3GATMA1 Hersteller : Infineon Technologies IPP032N06N3_Rev2.0.pdf?folderId=db3a30431441fb5d01148ca9f1be0e77&fileId=db3a30431ddc9372011e2a84ff084cc8 Description: MOSFET N-CH 60V 120A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 100A, 10V
Power Dissipation (Max): 188W (Tc)
Vgs(th) (Max) @ Id: 4V @ 118µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 30 V
auf Bestellung 29422 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
6+3.47 EUR
10+ 2.87 EUR
100+ 2.29 EUR
500+ 1.93 EUR
Mindestbestellmenge: 6
IPB029N06N3GATMA1 IPB029N06N3GATMA1 Hersteller : Infineon Technologies Infineon_IPP032N06N3_DS_v02_02_en-3164921.pdf MOSFET N-Ch 60V 120A D2PAK-2 OptiMOS 3
auf Bestellung 1043 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+3.48 EUR
10+ 2.9 EUR
100+ 2.31 EUR
250+ 2.22 EUR
500+ 1.94 EUR
1000+ 1.64 EUR
2000+ 1.57 EUR
IPB029N06N3GATMA1 IPB029N06N3GATMA1 Hersteller : Infineon Technologies ipp032n06n3_rev2.0.pdf Trans MOSFET N-CH 60V 120A 3-Pin(2+Tab) D2PAK T/R
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
IPB029N06N3GATMA1
Produktcode: 150736 		IPP032N06N3_Rev2.0.pdf?folderId=db3a30431441fb5d01148ca9f1be0e77&fileId=db3a30431ddc9372011e2a84ff084cc8 Transistoren > MOSFET N-CH
Produkt ist nicht verfügbar
IPB029N06N3GATMA1 IPB029N06N3GATMA1 Hersteller : INFINEON TECHNOLOGIES IPB029N06N3G-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 120A; 188W; PG-TO263-3
Mounting: SMD
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: PG-TO263-3
Drain-source voltage: 60V
Drain current: 120A
On-state resistance: 2.9mΩ
Type of transistor: N-MOSFET
Power dissipation: 188W
Polarisation: unipolar
Technology: OptiMOS™ 3
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPB029N06N3GATMA1 IPB029N06N3GATMA1 Hersteller : INFINEON TECHNOLOGIES IPB029N06N3G-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 120A; 188W; PG-TO263-3
Mounting: SMD
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: PG-TO263-3
Drain-source voltage: 60V
Drain current: 120A
On-state resistance: 2.9mΩ
Type of transistor: N-MOSFET
Power dissipation: 188W
Polarisation: unipolar
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar