IPB029N06NF2SATMA1 Infineon Technologies
Hersteller: Infineon TechnologiesDescription: TRENCH 40<-<100V
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 70A, 10V
Power Dissipation (Max): 3.8W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 80µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4600 pF @ 30 V
auf Bestellung 1600 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 800+ | 1.22 EUR |
| 1600+ | 1.21 EUR |
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Technische Details IPB029N06NF2SATMA1 Infineon Technologies
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; SiC; 60V; 120A; 150W; D2PAK,TO263; SMT, Type of transistor: N-MOSFET, Technology: SiC, Drain-source voltage: 60V, Drain current: 120A, Case: D2PAK; TO263, Gate-source voltage: 20V, Mounting: SMD, Gate charge: 68nC, Kind of channel: enhancement, Electrical mounting: SMT, On-state resistance: 2.9mΩ, Power dissipation: 150W.
Weitere Produktangebote IPB029N06NF2SATMA1 nach Preis ab 1.13 EUR bis 2.89 EUR
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IPB029N06NF2SATMA1 | Hersteller : Infineon Technologies |
MOSFETs TRENCH 40<-<100V |
auf Bestellung 1155 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB029N06NF2SATMA1 | Hersteller : Infineon Technologies |
Description: TRENCH 40<-<100V Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 120A (Tc) Rds On (Max) @ Id, Vgs: 2.9mOhm @ 70A, 10V Power Dissipation (Max): 3.8W (Ta), 150W (Tc) Vgs(th) (Max) @ Id: 3.3V @ 80µA Supplier Device Package: PG-TO263-3 Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4600 pF @ 30 V |
auf Bestellung 1613 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPB029N06NF2SATMA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; 60V; 120A; 150W; D2PAK,TO263; SMT Type of transistor: N-MOSFET Technology: SiC Drain-source voltage: 60V Drain current: 120A Case: D2PAK; TO263 Gate-source voltage: 20V Mounting: SMD Gate charge: 68nC Kind of channel: enhancement Electrical mounting: SMT On-state resistance: 2.9mΩ Power dissipation: 150W |
auf Bestellung 800 Stücke: Lieferzeit 14-21 Tag (e) |
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| IPB029N06NF2SATMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 60V 26A 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |