IPB029N15NM6ATMA1 Infineon Technologies
auf Bestellung 110 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 13+ | 11.20 EUR |
| 25+ | 10.68 EUR |
| 100+ | 10.17 EUR |
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Technische Details IPB029N15NM6ATMA1 Infineon Technologies
Description: TRENCH >=100V, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 165A (Tc), Rds On (Max) @ Id, Vgs: 2.8mOhm @ 100A, 15V, Power Dissipation (Max): 3.8W (Ta), 395W (Tc), Vgs(th) (Max) @ Id: 4V @ 276µA, Supplier Device Package: PG-TO263-3-2, Drive Voltage (Max Rds On, Min Rds On): 8V, 15V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 150 V, Gate Charge (Qg) (Max) @ Vgs: 137 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 9900 pF @ 75 V.
Weitere Produktangebote IPB029N15NM6ATMA1 nach Preis ab 7.43 EUR bis 13.97 EUR
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IPB029N15NM6ATMA1 | Hersteller : Infineon Technologies |
 Trans MOSFET N-CH 150V 24A 3-Pin(2+Tab) D2PAK T/R |
auf Bestellung 110 Stücke: Lieferzeit 14-21 Tag (e) |
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IPB029N15NM6ATMA1 | Hersteller : Infineon Technologies |
Description: TRENCH >=100V Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 165A (Tc) Rds On (Max) @ Id, Vgs: 2.8mOhm @ 100A, 15V Power Dissipation (Max): 3.8W (Ta), 395W (Tc) Vgs(th) (Max) @ Id: 4V @ 276µA Supplier Device Package: PG-TO263-3-2 Drive Voltage (Max Rds On, Min Rds On): 8V, 15V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 137 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9900 pF @ 75 V |
auf Bestellung 790 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB029N15NM6ATMA1 | Hersteller : Infineon Technologies |
MOSFETs TRENCH >=100V |
auf Bestellung 1640 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB029N15NM6ATMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 150V 24A 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
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IPB029N15NM6ATMA1 | Hersteller : Infineon Technologies |
Description: TRENCH >=100V Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 165A (Tc) Rds On (Max) @ Id, Vgs: 2.8mOhm @ 100A, 15V Power Dissipation (Max): 3.8W (Ta), 395W (Tc) Vgs(th) (Max) @ Id: 4V @ 276µA Supplier Device Package: PG-TO263-3-2 Drive Voltage (Max Rds On, Min Rds On): 8V, 15V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 137 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9900 pF @ 75 V |
Produkt ist nicht verfügbar |