IPB030N08N3GATMA1 Infineon Technologies
Hersteller: Infineon Technologies
Description: MOSFET N-CH 80V 160A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 100A, 10V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 155µA
Supplier Device Package: PG-TO263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8110 pF @ 40 V
Description: MOSFET N-CH 80V 160A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 100A, 10V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 155µA
Supplier Device Package: PG-TO263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8110 pF @ 40 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1000+ | 3.34 EUR |
2000+ | 3.14 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details IPB030N08N3GATMA1 Infineon Technologies
Description: INFINEON - IPB030N08N3GATMA1 - Leistungs-MOSFET, n-Kanal, 80 V, 160 A, 0.0025 ohm, TO-263 (D2PAK), Oberflächenmontage, tariffCode: 85412900, Transistormontage: Oberflächenmontage, Drain-Source-Spannung Vds: 80V, rohsCompliant: YES, Dauer-Drainstrom Id: 160A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, MSL: MSL 1 - unbegrenzt, usEccn: EAR99, Gate-Source-Schwellenspannung, max.: 2.8V, euEccn: NLR, Verlustleistung: 214W, Bauform - Transistor: TO-263 (D2PAK), Anzahl der Pins: 7Pins, Produktpalette: -, productTraceability: Yes-Date/Lot Code, Kanaltyp: n-Kanal, Rds(on)-Prüfspannung: 10V, Betriebstemperatur, max.: 175°C, Drain-Source-Durchgangswiderstand: 0.0025ohm.
Weitere Produktangebote IPB030N08N3GATMA1 nach Preis ab 3.9 EUR bis 6.46 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
IPB030N08N3GATMA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 80V 160A TO263-7 Packaging: Cut Tape (CT) Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 160A (Tc) Rds On (Max) @ Id, Vgs: 3mOhm @ 100A, 10V Power Dissipation (Max): 214W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 155µA Supplier Device Package: PG-TO263-7 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8110 pF @ 40 V |
auf Bestellung 2748 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||
IPB030N08N3GATMA1 | Hersteller : INFINEON |
Description: INFINEON - IPB030N08N3GATMA1 - Leistungs-MOSFET, n-Kanal, 80 V, 160 A, 0.0025 ohm, TO-263 (D2PAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 80V rohsCompliant: YES Dauer-Drainstrom Id: 160A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.8V euEccn: NLR Verlustleistung: 214W Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 7Pins Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0025ohm |
auf Bestellung 2300 Stücke: Lieferzeit 14-21 Tag (e) |
||||||||||||
IPB030N08N3GATMA1 | Hersteller : Infineon Technologies | Trans MOSFET N-CH 80V 160A Automotive 7-Pin(6+Tab) D2PAK T/R |
auf Bestellung 2000 Stücke: Lieferzeit 14-21 Tag (e) |
||||||||||||
IPB030N08N3GATMA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 160A; 214W; PG-TO263-7 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 80V Drain current: 160A Power dissipation: 214W Case: PG-TO263-7 Gate-source voltage: ±20V On-state resistance: 3mΩ Mounting: SMD Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||||||||||||
IPB030N08N3GATMA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 160A; 214W; PG-TO263-7 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 80V Drain current: 160A Power dissipation: 214W Case: PG-TO263-7 Gate-source voltage: ±20V On-state resistance: 3mΩ Mounting: SMD Kind of channel: enhanced |
Produkt ist nicht verfügbar |