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IPB035N10NF2SATMA1

IPB035N10NF2SATMA1 Infineon Technologies

Infineon-IPB035N10NF2S-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c93dda25b0194fe49b5c07666 Hersteller: Infineon Technologies
Description: TRENCH >=100V
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 151A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 80A, 10V
Power Dissipation (Max): 3.8W (Ta), 214W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 113µA
Supplier Device Package: PG-TO263-3-8
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4900 pF @ 50 V
auf Bestellung 525 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.56 EUR
10+2.29 EUR
100+1.56 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details IPB035N10NF2SATMA1 Infineon Technologies

Description: TRENCH >=100V, Packaging: Cut Tape (CT), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 151A (Tc), Rds On (Max) @ Id, Vgs: 3.5mOhm @ 80A, 10V, Power Dissipation (Max): 3.8W (Ta), 214W (Tc), Vgs(th) (Max) @ Id: 3.8V @ 113µA, Supplier Device Package: PG-TO263-3-8, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4900 pF @ 50 V.

Weitere Produktangebote IPB035N10NF2SATMA1 nach Preis ab 1.04 EUR bis 3.64 EUR

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IPB035N10NF2SATMA1 IPB035N10NF2SATMA1 Hersteller : Infineon Technologies Infineon_DS_IPB035N10NF2S_1_0.pdf MOSFETs StrongIRFET 2 Power -Transistor, 100 V
auf Bestellung 1285 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+3.64 EUR
10+2.32 EUR
100+1.59 EUR
500+1.32 EUR
800+1.16 EUR
2400+1.08 EUR
4800+1.04 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IPB035N10NF2SATMA1 IPB035N10NF2SATMA1 Hersteller : Infineon Technologies Infineon-IPB035N10NF2S-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c93dda25b0194fe49b5c07666 Description: TRENCH >=100V
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 151A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 80A, 10V
Power Dissipation (Max): 3.8W (Ta), 214W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 113µA
Supplier Device Package: PG-TO263-3-8
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4900 pF @ 50 V
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Im Einkaufswagen  Stück im Wert von  UAH