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IPB037N06N3GATMA1 Infineon Technologies


Infineon-IPB037N06N3%20G-DS-v02_00-EN.pdf?fileId=5546d46268554f4a01685b00fd7802f5
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 90A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO263-3
Vgs(th) (Max) @ Id: 4V @ 90µA
Power Dissipation (Max): 188W (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 90A, 10V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
1000+1.27 EUR
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details IPB037N06N3GATMA1 Infineon Technologies

Description: MOSFET N-CH 60V 90A D2PAK, Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 30 V, Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: PG-TO263-3, Vgs(th) (Max) @ Id: 4V @ 90µA, Power Dissipation (Max): 188W (Tc), Rds On (Max) @ Id, Vgs: 3.7mOhm @ 90A, 10V, Current - Continuous Drain (Id) @ 25°C: 90A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tape & Reel (TR).

Weitere Produktangebote IPB037N06N3GATMA1 nach Preis ab 1.2 EUR bis 3.98 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Preis
IPB037N06N3GATMA1 IPB037N06N3GATMA1 Infineon Technologies Infineon-IPB037N06N3 G-DS-v02_00-EN.pdf MOSFETs N-Ch 60V 90A D2PAK-2 OptiMOS 3
auf Bestellung 910 Stücke:
Lieferzeit 10-14 Tag (e)
1+3.52 EUR
10+1.54 EUR
100+1.47 EUR
500+1.41 EUR
1000+1.24 EUR
2000+1.2 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IPB037N06N3GATMA1 IPB037N06N3GATMA1 Infineon Technologies Infineon-IPB037N06N3%20G-DS-v02_00-EN.pdf?fileId=5546d46268554f4a01685b00fd7802f5 Description: MOSFET N-CH 60V 90A D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO263-3
Vgs(th) (Max) @ Id: 4V @ 90µA
Power Dissipation (Max): 188W (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 90A, 10V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
auf Bestellung 1537 Stücke:
Lieferzeit 10-14 Tag (e)
5+3.98 EUR
10+2.57 EUR
100+1.76 EUR
500+1.42 EUR
Mindestbestellmenge: 5 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IPB037N06N3GATMA1 Infineon-IPB037N06N3 G-DS-v02_00-EN.pdf
Hersteller: Infineon Technologies
MOSFETs N-Ch 60V 90A D2PAK-2 OptiMOS 3
auf Bestellung 910 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
1+3.52 EUR
10+1.54 EUR
100+1.47 EUR
500+1.41 EUR
1000+1.24 EUR
2000+1.2 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IPB037N06N3GATMA1 Infineon-IPB037N06N3%20G-DS-v02_00-EN.pdf?fileId=5546d46268554f4a01685b00fd7802f5
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 90A D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO263-3
Vgs(th) (Max) @ Id: 4V @ 90µA
Power Dissipation (Max): 188W (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 90A, 10V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
auf Bestellung 1537 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
5+3.98 EUR
10+2.57 EUR
100+1.76 EUR
500+1.42 EUR
Mindestbestellmenge: 5 Stücke
Im Einkaufswagen  Stück im Wert von  UAH