IPB037N06N3GATMA1 Infineon Technologies
| Anzahl | Privatkunde |
|---|---|
| 1000+ | 1.48 EUR |
Artikel auf Bestellung
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Lieferzeit:
14-21 Tag (e)
Mindestmenge:
1000 Stücke
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Technische Details IPB037N06N3GATMA1 Infineon Technologies
Description: MOSFET N-CH 60V 90A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 90A (Tc), Rds On (Max) @ Id, Vgs: 3.7mOhm @ 90A, 10V, Power Dissipation (Max): 188W (Tc), Vgs(th) (Max) @ Id: 4V @ 90µA, Supplier Device Package: PG-TO263-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 30 V.
Weitere Produktangebote IPB037N06N3GATMA1 nach Preis ab 1.25 EUR bis 6.15 EUR
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IPB037N06N3GATMA1 | Infineon Technologies |
 Trans MOSFET N-CH 60V 90A 3-Pin(2+Tab) D2PAK T/R |
auf Bestellung 2000 Stücke: Lieferzeit 14-21 Tag (e) |
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IPB037N06N3GATMA1 | Infineon Technologies |
Trans MOSFET N-CH 60V 90A 3-Pin(2+Tab) D2PAK T/R |
auf Bestellung 248 Stücke: Lieferzeit 14-21 Tag (e) |
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IPB037N06N3GATMA1 | Infineon Technologies |
Trans MOSFET N-CH 60V 90A 3-Pin(2+Tab) D2PAK T/R |
auf Bestellung 248 Stücke: Lieferzeit 14-21 Tag (e) |
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IPB037N06N3GATMA1 | Infineon Technologies |
Description: MOSFET N-CH 60V 90A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 3.7mOhm @ 90A, 10V Power Dissipation (Max): 188W (Tc) Vgs(th) (Max) @ Id: 4V @ 90µA Supplier Device Package: PG-TO263-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 30 V |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB037N06N3GATMA1 | Infineon Technologies |
Trans MOSFET N-CH 60V 90A 3-Pin(2+Tab) D2PAK T/R |
auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
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IPB037N06N3GATMA1 | Infineon Technologies |
Trans MOSFET N-CH 60V 90A 3-Pin(2+Tab) D2PAK T/R |
auf Bestellung 300 Stücke: Lieferzeit 14-21 Tag (e) |
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IPB037N06N3GATMA1 | Infineon Technologies |
Trans MOSFET N-CH 60V 90A 3-Pin(2+Tab) D2PAK T/R |
auf Bestellung 1990 Stücke: Lieferzeit 14-21 Tag (e) |
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IPB037N06N3GATMA1 | Infineon Technologies |
Trans MOSFET N-CH 60V 90A 3-Pin(2+Tab) D2PAK T/R |
auf Bestellung 1990 Stücke: Lieferzeit 14-21 Tag (e) |
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IPB037N06N3GATMA1 | Infineon Technologies |
MOSFETs N-Ch 60V 90A D2PAK-2 OptiMOS 3 |
auf Bestellung 716 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB037N06N3GATMA1 | Infineon Technologies |
Description: MOSFET N-CH 60V 90A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 3.7mOhm @ 90A, 10V Power Dissipation (Max): 188W (Tc) Vgs(th) (Max) @ Id: 4V @ 90µA Supplier Device Package: PG-TO263-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 30 V |
auf Bestellung 3672 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB037N06N3GATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 90A; 188W; PG-TO263-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 90A Power dissipation: 188W Case: PG-TO263-3 Gate-source voltage: ±20V On-state resistance: 3.7mΩ Mounting: SMD Kind of channel: enhancement Technology: OptiMOS™ 3 |
auf Bestellung 992 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| IPB037N06N3GATMA1 |
|
Hersteller: Infineon Technologies
Trans MOSFET N-CH 60V 90A 3-Pin(2+Tab) D2PAK T/R
Trans MOSFET N-CH 60V 90A 3-Pin(2+Tab) D2PAK T/R
auf Bestellung 2000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1000+ | 1.48 EUR |
| IPB037N06N3GATMA1 |
|
Hersteller: Infineon Technologies
Trans MOSFET N-CH 60V 90A 3-Pin(2+Tab) D2PAK T/R
Trans MOSFET N-CH 60V 90A 3-Pin(2+Tab) D2PAK T/R
auf Bestellung 248 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 108+ | 1.67 EUR |
| 109+ | 1.61 EUR |
| 111+ | 1.55 EUR |
| 113+ | 1.49 EUR |
| IPB037N06N3GATMA1 |
|
Hersteller: Infineon Technologies
Trans MOSFET N-CH 60V 90A 3-Pin(2+Tab) D2PAK T/R
Trans MOSFET N-CH 60V 90A 3-Pin(2+Tab) D2PAK T/R
auf Bestellung 248 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 108+ | 1.67 EUR |
| 109+ | 1.57 EUR |
| 111+ | 1.49 EUR |
| 113+ | 1.42 EUR |
| IPB037N06N3GATMA1 |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 90A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 90A, 10V
Power Dissipation (Max): 188W (Tc)
Vgs(th) (Max) @ Id: 4V @ 90µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 30 V
Description: MOSFET N-CH 60V 90A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 90A, 10V
Power Dissipation (Max): 188W (Tc)
Vgs(th) (Max) @ Id: 4V @ 90µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 30 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1000+ | 2.08 EUR |
| 3000+ | 1.87 EUR |
| IPB037N06N3GATMA1 |
|
Hersteller: Infineon Technologies
Trans MOSFET N-CH 60V 90A 3-Pin(2+Tab) D2PAK T/R
Trans MOSFET N-CH 60V 90A 3-Pin(2+Tab) D2PAK T/R
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 226+ | 2.96 EUR |
| 500+ | 2.63 EUR |
| 1000+ | 2.36 EUR |
| IPB037N06N3GATMA1 |
|
Hersteller: Infineon Technologies
Trans MOSFET N-CH 60V 90A 3-Pin(2+Tab) D2PAK T/R
Trans MOSFET N-CH 60V 90A 3-Pin(2+Tab) D2PAK T/R
auf Bestellung 300 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 226+ | 2.96 EUR |
| IPB037N06N3GATMA1 |
|
Hersteller: Infineon Technologies
Trans MOSFET N-CH 60V 90A 3-Pin(2+Tab) D2PAK T/R
Trans MOSFET N-CH 60V 90A 3-Pin(2+Tab) D2PAK T/R
auf Bestellung 1990 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 45+ | 4 EUR |
| 58+ | 2.96 EUR |
| 100+ | 2.57 EUR |
| 500+ | 2 EUR |
| 1000+ | 1.78 EUR |
| IPB037N06N3GATMA1 |
|
Hersteller: Infineon Technologies
Trans MOSFET N-CH 60V 90A 3-Pin(2+Tab) D2PAK T/R
Trans MOSFET N-CH 60V 90A 3-Pin(2+Tab) D2PAK T/R
auf Bestellung 1990 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 44+ | 4.06 EUR |
| 63+ | 2.78 EUR |
| 65+ | 2.67 EUR |
| 100+ | 1.9 EUR |
| 500+ | 1.54 EUR |
| 1000+ | 1.25 EUR |
| IPB037N06N3GATMA1 |
|
Hersteller: Infineon Technologies
MOSFETs N-Ch 60V 90A D2PAK-2 OptiMOS 3
MOSFETs N-Ch 60V 90A D2PAK-2 OptiMOS 3
auf Bestellung 716 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 6.06 EUR |
| 10+ | 3.01 EUR |
| 100+ | 2.75 EUR |
| 500+ | 2.23 EUR |
| 1000+ | 2.03 EUR |
| IPB037N06N3GATMA1 |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 90A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 90A, 10V
Power Dissipation (Max): 188W (Tc)
Vgs(th) (Max) @ Id: 4V @ 90µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 30 V
Description: MOSFET N-CH 60V 90A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 90A, 10V
Power Dissipation (Max): 188W (Tc)
Vgs(th) (Max) @ Id: 4V @ 90µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 30 V
auf Bestellung 3672 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 6.15 EUR |
| 10+ | 4 EUR |
| 50+ | 3.07 EUR |
| 100+ | 2.77 EUR |
| 500+ | 2.25 EUR |
| IPB037N06N3GATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 90A; 188W; PG-TO263-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 90A
Power dissipation: 188W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 3.7mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 90A; 188W; PG-TO263-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 90A
Power dissipation: 188W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 3.7mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
auf Bestellung 992 Stücke:
Lieferzeit 14-21 Tag (e)